Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jorge Budagosky"'
Autor:
Ana Isabel Borras, Xabier García-Casas, Francisco J. Aparicio, Jorge Budagosky, Ali Ghaffarinejad, Noel Orozco-Corrales, Kostya (Ken) Ostrikov, Juan R. Sánchez-Valencia, Angel Barranco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c079d4b6515d4ec09eaa246bf216434b
https://doi.org/10.2139/ssrn.4442228
https://doi.org/10.2139/ssrn.4442228
Publikováno v:
Plasma Processes and Polymers. 19
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecea06143eef29311fc73937ec06f68f
https://doi.org/10.1002/ppap.202270008
https://doi.org/10.1002/ppap.202270008
Publikováno v:
Plasma Processes and Polymers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3ff6e9ddb3cc9faa5d7d696e12829c3
https://doi.org/10.1002/ppap.202100179
https://doi.org/10.1002/ppap.202100179
Autor:
Artem G. Rybkin, Clemens Laubschat, Oleg Yu. Vilkov, Jorge Budagosky, Alexander M. Shikin, Dmitry Yu. Usachov, Denis V. Vyalikh, Eugene E. Krasovskii, Alexander Fedorov
Publikováno v:
Physical Review B. 99
Angle-resolved secondary electron emission spectra were analyzed for studying the electron transmission properties of graphene when it is tightly bound to a metallic substrate and when it is decoupled from the latter. As respective model systems, gra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb12243a286b665b20faf21deec7951f
https://doi.org/10.1103/physrevb.99.195421
https://doi.org/10.1103/physrevb.99.195421
Autor:
Hubert Renevier, Bruno Daudin, Ana Cros, Rafael Mata, Karine Hestroffer, Jorge Budagosky, Catherine Bougerol
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, 2011, 334 (1), pp.177-180. ⟨10.1016/j.jcrysgro.2011.08.015⟩
Journal of Crystal Growth, Elsevier, 2011, 334 (1), pp.177-180. ⟨10.1016/j.jcrysgro.2011.08.015⟩
Journal of Crystal Growth, 2011, 334 (1), pp.177-180. ⟨10.1016/j.jcrysgro.2011.08.015⟩
Journal of Crystal Growth, Elsevier, 2011, 334 (1), pp.177-180. ⟨10.1016/j.jcrysgro.2011.08.015⟩
The growth of GaN nanowires by means of plasma assisted molecular beam epitaxy directly on Si(1 1 1) has been investigated as a function of temperature. Statistical analysis of scanning electron microscopy pictures taken for different growth temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53eb0ca348bcacb31edced64e003f57b
https://hal.science/hal-01005934
https://hal.science/hal-01005934