Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jorge Andres, Guerra"'
Autor:
Juan A. Ramos-Guivar, Jacquelyne Y. Zarria-Romero, Yamerson Canchanya-Huaman, Jorge Andres Guerra, Noemi-Raquel Checca-Huaman, Isabel-Liz Castro-Merino, Edson C. Passamani
Publikováno v:
Nanomaterials, Vol 12, Iss 11, p 1805 (2022)
A ternary nanocomposite made of nanomaghemite, nanoanatase, and graphene oxide has been successfully synthesized using an inorganic coprecipitation approach, and it has been systematically investigated by X-ray diffraction, transmission electron micr
Externí odkaz:
https://doaj.org/article/7616d19e87d6410d9164a8df0ccd7458
Autor:
Yamerson Canchanya-Huaman, Angie F. Mayta-Armas, Jemina Pomalaya-Velasco, Yéssica Bendezú-Roca, Jorge Andres Guerra, Juan A. Ramos-Guivar
Publikováno v:
Nanomaterials, Vol 11, Iss 9, p 2311 (2021)
Various crystallite size estimation methods were used to analyze X-ray diffractograms of spherical cerium dioxide and titanium dioxide anatase nanoparticles aiming to evaluate their reliability and limitations. The microstructural parameters were est
Externí odkaz:
https://doaj.org/article/c97bfb3d1b1243b1aad105147c51f6d8
Autor:
Kevin Lizarraga Olivares, Luis Enrique Moran, Alvaro Tejada, Miguel Piñeiro, Paul Llontop, Erick Serquen Infante, Erik Perez, Lars Korte, Jorge Andres Guerra
We propose new models to describe the imaginary part of the electrical permittivity of dielectric and semiconductor materials in the fundamental absorption region. We work out our procedure based on the well-known structure of the Tauc-Lorentz model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea23df70df4382ceee9e28a6cc72c45e
http://arxiv.org/abs/2212.04012
http://arxiv.org/abs/2212.04012
Autor:
María del Carmen Mejia, Mario Kurniawan, Andrea Knauer, Francisco Rumiche, Andreas Bund, Jorge Andres Guerra
Publikováno v:
Materials Science in Semiconductor Processing. 143:106474
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f7590c943b847a64ba94162cfd0e214
https://doi.org/10.1016/j.mssp.2022.106474
https://doi.org/10.1016/j.mssp.2022.106474
Publikováno v:
ECS Meeting Abstracts. :1695-1695
Rare-earth doped wide bandgap semiconductors give rise to many different luminescent applications. One main focus lies on electroluminescent devices due to the electronic behavior of the semiconductor host material. This kind of host materials allow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98e5169152cc2094469937209e3203e3
https://doi.org/10.1149/ma2018-02/49/1695
https://doi.org/10.1149/ma2018-02/49/1695