Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jorg Schuhmacher"'
Publikováno v:
Microelectronic Engineering. 83:2068-2071
The growth of tungsten nitride carbide, WN"xC"y, films obtained by atomic layer deposition (ALD), using tri-ethylboron, tungsten hexafluoride and ammonia precursors is determined by the density and type of substrate reactive sites. During an initial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98ea01734d400fd768a26027ad609d4f
https://doi.org/10.1016/j.mee.2006.09.010
https://doi.org/10.1016/j.mee.2006.09.010
Publikováno v:
Microelectronic Engineering. 82:411-415
The lateral diffusion of toluene solvent molecules was employed to probe the porous structures of plasma damaged low k dielectrics and ultra-thin ALD copper diffusion barriers. A change in the pore structure of a microporous CVD low k was determined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b047237a127d7870f36fe527695a40b
https://doi.org/10.1016/j.mee.2005.07.024
https://doi.org/10.1016/j.mee.2005.07.024
Autor:
Jean-Pierre Celis, W Besling, Denis Shamiryan, Karen Maex, J. Waeterloos, A. Martin Hoyas, Jorg Schuhmacher
Publikováno v:
Journal of Applied Physics. 95:381-388
Atomic layer deposition (ALD) of tungsten carbide nitride (WC0.7N0.3) on a low-k (dielectric constant) dielectric aromatic polymer material is investigated. It is feasible to deposit thin WC0.7N0.3 films on polymers, but applying a nitrogen–oxygen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79708a9b1bb203fce7be2d28f34a2143
https://doi.org/10.1063/1.1631070
https://doi.org/10.1063/1.1631070
Publikováno v:
MRS Proceedings. 812
Our understanding of the role of the initial surface on atomic layer deposition (ALD) of Cu diffusion barrier materials is limited by the complexity of the sequential reactions and the heterogeneous nature of typical dielectric substrates. The atomic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ddd50c559545869c5a0eeeb5b1ef7f0
https://doi.org/10.1557/proc-812-f2.2
https://doi.org/10.1557/proc-812-f2.2
Publikováno v:
MRS Proceedings. 812
ALD WNC nucleation and growth was observed strongly affected by different substrate materials and surface chemistries. Nucleation was inhibited on most pristine low k surfaces, which is attributed to low concentrations of chemisorption sites (Si-OH).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19b69bdf3307504464960fce236a26e0
https://doi.org/10.1557/proc-812-f2.7
https://doi.org/10.1557/proc-812-f2.7
Autor:
Jorg Schuhmacher, W Besling, Dirk J. Gravesteijn, Alessandra Satta, Gerald Beyer, Ana Martin Hoyas, Karen Maex, Thomas Abell, Victor Sutcliffe
Publikováno v:
Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).
Ternary tungsten carbo nitride WCN films and titanium nitride TiN films were deposited with atomic layer deposition as diffusion barrier materials for copper metallisation. The growth behaviour on different substrates and surface closure was studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e31274123acdeac892e5e75972cd790
https://doi.org/10.1109/iitc.2002.1014959
https://doi.org/10.1109/iitc.2002.1014959
Autor:
Brenda Eyckens, Alain M. Jonas, Jean-Pierre Celis, Karen Maex, Jorg Schuhmacher, O. Richard, Wilfried Vandervorst, André Vantomme, Caroline Whelan, Youssef Travaly, Simone Giangrandi, Bert Brijs, Timo Sajavaara, A. Martin Hoyas
Publikováno v:
Journal of Applied Physics. 99:063515
The growth of tungsten nitride carbide (WNxCy) films obtained by atomic layer deposition using triethylboron, tungsten hexafluoride, and ammonia precursors is determined by the density and type of reactive sites. The film properties change as a funct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6f06c4107c87062a1c5a577159b787d
https://doi.org/10.1063/1.2182074
https://doi.org/10.1063/1.2182074
Publikováno v:
ECS Meeting Abstracts. :453-453
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd303e2aa4796ef3681e47cb661d8143
https://doi.org/10.1149/ma2005-01/10/453
https://doi.org/10.1149/ma2005-01/10/453
Publikováno v:
Electrochemical and Solid-State Letters. 9:F64
The growth of tungsten nitride carbide, WN x C y , films obtained by atomic layer deposition is determined by the density and type of substrate reactive sites. WN x C y film growth on silicon dioxide is determined by the silanol group concentration,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b284a3a82cfc2b1113ecdf78b962b827
https://doi.org/10.1149/1.2203239
https://doi.org/10.1149/1.2203239
Autor:
Jean-Pierre Celis, Karen Maex, Jorg Schuhmacher, A. Martin Hoyas, D. Vanhaeren, Caroline Whelan, T. Fernandez Landaluce
Publikováno v:
Journal of Applied Physics. 100:114903
Atomic layer deposition (ALD) of tungsten nitride carbide (WNxCy) on methyl-terminated self-assembled monolayers (SAMs) is investigated. SAM substrates provide extended transient regimes of different lengths, during which the WNxCy film growth is non
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9c043bb3b63f99985852f9b72ad5df6
https://doi.org/10.1063/1.2363241
https://doi.org/10.1063/1.2363241