Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jorg Haarer"'
Autor:
Julian Weimer, Dominik Koch, Maximilian Nitzsche, Jorg Haarer, Jorg Roth-Stielow, Ingmar Kallfass
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 3, Pp 13-25 (2022)
This paper presents the design and analysis of a high-density two-stage battery charger for mid-power applications like small electric vehicles and high-performance laptops utilizing gallium nitride (GaN) power devices. In addition to adherence of ma
Externí odkaz:
https://doaj.org/article/69e3fd6f017d473ca79857384df4d54c
Publikováno v:
2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia).
Publikováno v:
2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia).
Autor:
Manuel Fischer, Philipp Ziegler, Jorg Roth-Stielow, Yiru Zhao, Johannes Ruthardt, Jorg Haarer
Publikováno v:
2021 IEEE Energy Conversion Congress and Exposition (ECCE).
Magnetic field-based current sensors are widely used due to their galvanically isolated measurement principle. A well-proved concept is based on the discrete realization of the Ampere´s law using a circular array of magnetic field sensors. Depending
Publikováno v:
2021 IEEE Energy Conversion Congress and Exposition (ECCE).
Power-hardware-in-the-loop emulation of electrical machines is a useful tool to simplify the development and testing process of traction inverters and their control systems at different operating conditions. This requires two fundamental components:
Publikováno v:
2021 IEEE Energy Conversion Congress and Exposition (ECCE).
The design of a compact AC/DC converter for a wide output voltage range imposes stringent challenges regarding electrical and thermal performance. To match these requirements this paper presents the design approach and measurements of a Totem-Pole Po
Publikováno v:
2021 IEEE Design Methodologies Conference (DMC).
Hotspots on passively cooled housings of power electronic systems result in early exceeding of surface contact temperatures and therefore in not fully utilizing the maximum loss budget for maximum power density. This paper presents an automated desig
Publikováno v:
IECON
With the increasing utilization of wide bandgap materials in power electronics such as silicon carbide (SiC) and gallium nitride (GaN), high voltage GaN transistors step into focus. However, low voltage GaN transistors have been on the market much lo