Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Joren Severi"'
Publikováno v:
Polymers, Vol 12, Iss 12, p 2971 (2020)
Extreme ultra-violet lithography (EUVL) is the leading-edge technology to produce advanced nanoelectronics. The further development of EUVL is heavily based on implementing the so-called high numerical aperture (NA) EUVL, which will enable even small
Externí odkaz:
https://doaj.org/article/5a943a6d75544f508ca4d34f06afaeef
Autor:
Juhae Park, Sung-Gyu Lee, Yannick Vesters, Joren Severi, Myungwoong Kim, Danilo De Simone, Hye-Keun Oh, Su-Mi Hur
Publikováno v:
Polymers, Vol 11, Iss 12, p 1923 (2019)
Extreme ultraviolet lithography (EUVL) is a leading-edge technology for pattern miniaturization and the production of advanced electronic devices. One of the current critical challenges for further scaling down the technology is reducing the line-edg
Externí odkaz:
https://doaj.org/article/ec84140b63ef49f8b0c3bd8c581f0cfb
Autor:
Eisuke Ohtomi, Vicky Philipsen, Joren Severi, Ulrich Welling, Laurence S. Melvin, Yosuke Takahata, Yusuke Tanaka, Danilo De Simone
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Autor:
Minjung Kim, Dorin Cerbu, Selim Dogru, Kumara Sastry, Gian Lorusso, Mohamed Zidan, Mohamed Saib, Joren Severi, Danilo De Simone, Vivek K. Singh
Publikováno v:
DTCO and Computational Patterning II.
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 22
Autor:
Mohamed Zidan, Daniel Fischer, Joren Severi, Danilo De Simone, Alain Moussa, Angelika Müllender, Chris Mack, Anne-Laure Charley, Philippe Leray, Stefan De Gendt, Gian Francesco Lorusso
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 22
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 21
ispartof: JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3 vol:21 issue:4 status: published
Autor:
Gian Francesco Lorusso, Danilo De Simone, Mohamed Zidan, Joren Severi, Alain Moussa, Bappaditya Dey, Sandip Halder, Alex Goldenshtein, Kevin Houchens, Gaetano Santoro, Daniel Fischer, Angelika Muellender, Chris Mack, Tsuyoshi Kondo, Tomoyasu Shohjoh, Masami Ikota, Anne-Laure Charley, Stefan De Gendt, Philippe Leray
Publikováno v:
Japanese Journal of Applied Physics. 62:SG0808
One of the many constraints of high numerical aperture extreme ultraviolet lithography is related to resist thickness. A critical consequence of moving from the current 0.33 to 0.55 NA (high NA) is depth of focus reduction. The question we seek to an
Autor:
Mohamed Zidan, Daniel Fischer, Gian F. Lorusso, Joren Severi, Danilo De Simone, Alain Moussa, Angelika Muellender, Chris A. Mack, Anne-Laure Charley, Philippe Leray, Stefan De Gendt
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.