Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Jordan R. Nicholls"'
Autor:
Jordan R. Nicholls, Sima Dimitrijev
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 545-553 (2020)
We develop a complete compact model to describe the forward current, reverse current, and capacitance of SiC Schottky barrier diodes. The model is based on the fundamental current mechanisms of thermionic emission and tunneling, and is usable over a
Externí odkaz:
https://doaj.org/article/59f29a6b0fa24acf86798c4c0454ab5c
Autor:
Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Jordan R. Nicholls, Peyush Pande, Sima Dimitrijev
Publikováno v:
IEEE Access, Vol 8, Pp 98038-98043 (2020)
Two different equations for the current through voltage-dependent capacitances are used in the literature. One equation is obtained from the time derivative of charge that is considered as capacitance-voltage product: dQ/dt = d[C(V )V ]/dt = C(V)[dV
Externí odkaz:
https://doaj.org/article/30929905b80e4ad5bee0b1b413fcb4c8
Autor:
Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande, Jordan R. Nicholls, Sima Dimitrijev
Publikováno v:
IEEE Access, Vol 8, Pp 187043-187051 (2020)
Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching interval
Externí odkaz:
https://doaj.org/article/f55a9104c9d84f99a948349cced1e22c
Autor:
Sima Dimitrijev, Jordan R. Nicholls
Publikováno v:
IEEE Transactions on Electron Devices. 68:6393-6399
The popular Tung model for Schottky barrier inhomogeneity considers how low-barrier patches (embedded in a high barrier background) impact the diode current. However, Tung's model fails to account for the image-force effect. We analyze how the image
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19a9607a56e17cc0f97efcb9b366a250
https://doi.org/10.1109/ted.2021.3120230
https://doi.org/10.1109/ted.2021.3120230
Autor:
Sima Dimitrijev, Jordan R. Nicholls
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 34:493-499
The number of variables involved in the formation of Ohmic contacts to SiC is large, and their relationships to the final contact resistance are often unclear. As such, trial-and-error methods are typically employed to develop or improve SiC contacts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5371191ed7a51a331b20959afe3b72b
https://doi.org/10.1109/tsm.2021.3108460
https://doi.org/10.1109/tsm.2021.3108460
Autor:
Utkarsh Jadli, Peyush Pande, Sima Dimitrijev, Hamid Amini Moghadam, Jordan R. Nicholls, Faisal Mohd-Yasin
Publikováno v:
IEEE Transactions on Power Electronics. 35:12629-12632
The parasitic capacitances of semiconductor power devices that contribute to the switching losses are voltage dependent, which can make calculations of their stored energy difficult. Typically, manufacturers will provide effective capacitance values
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66a37f9f023fcc1a4ade07987ed90453
https://doi.org/10.1109/tpel.2020.2993639
https://doi.org/10.1109/tpel.2020.2993639
Autor:
Sima Dimitrijev, Arnar M. Vidarsson, Einar Ö. Sveinbjörnsson, Daniel Haasmann, Jordan R. Nicholls
Publikováno v:
IEEE Transactions on Electron Devices. 67:3722-3728
The low channel-carrier mobility in commercial SiC MOSFETs has been attributed to fast electron traps labeled “NI.” These traps exhibit anomalous behavior compared to other interface trap signals. Furthermore, the electrical parameters extracted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad936d6ea21f20a309dc319957713173
https://doi.org/10.1109/ted.2020.3011661
https://doi.org/10.1109/ted.2020.3011661
Publikováno v:
Analytical Chemistry. 92:12473-12480
Inertial microfluidics is a promising approach for particle separation because of the superior advantages of high throughput, simplicity, precise manipulation, and low cost. However, the current obstacle of inertial microfluidics in biological applic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a292938867aac8818af66c51a458a6ff
https://doi.org/10.1021/acs.analchem.0c02294
https://doi.org/10.1021/acs.analchem.0c02294
Autor:
Peyush Pande, Sima Dimitrijev, Jordan R. Nicholls, Utkarsh Jadli, Hamid Amini Moghadam, Faisal Mohd-Yasin
Publikováno v:
IEEE Access, Vol 8, Pp 98038-98043 (2020)
Two different equations for the current through voltage-dependent capacitances are used in the literature. One equation is obtained from the time derivative of charge that is considered as capacitance–voltage product: ${\it dQ/dt=d[C(V)V]/dt=C(V)[d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c8f817f6c354ba7503f58abf1f23aad
https://ieeexplore.ieee.org/document/9102297/
https://ieeexplore.ieee.org/document/9102297/
Autor:
Peyush Pande, Hamid Amini Moghadam, Utkarsh Jadli, Faisal Mohd-Yasin, Jordan R. Nicholls, Sima Dimitrijev
Publikováno v:
IEEE Access, Vol 8, Pp 187043-187051 (2020)
Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching interval
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74391bba258ac08c594276c035c9a5ba
https://doi.org/10.1109/access.2020.3030269
https://doi.org/10.1109/access.2020.3030269