Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jordan Merkel"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 525-534 (2018)
A 10.5 nm silicon doped HfO2 film is deposited and examined on three different bottom electrodes: a TiN electrode such as would be found in capacitive FeRAM, a lightly doped p-Si substrate as would be present in an FeFET, and an n+ Si electrode. The
Externí odkaz:
https://doaj.org/article/15c3ce0ad74a4a03adb224c7df57c2dc
Autor:
Jerome T. Mlack, Nick Edwards, Brian Novak, Annaliese Drechsler, Jordan Merkel, Timothy Vasen, Daniel J. Hannan, Paul Brabant, Ishan Wathuthanthri, Justin Parke, Sam Wanis, Robert S. Howell, Ken A. Nagamatsu
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73391c9a8d33ea0518a8acd9d13b5043
https://doi.org/10.1109/bcicts50416.2021.9682468
https://doi.org/10.1109/bcicts50416.2021.9682468
Autor:
Shamima Afroz, Eric J. Stewart, Sara Taylor, Josephine B. Chang, Robert S. Howell, Ken Nagamatsu, Kevin Frey, Shalini Gupta, Sarat Saluru, Jordan Merkel
Publikováno v:
IEEE Electron Device Letters. 40:1048-1051
We report on the super-lattice castellated field-effect transistor (SLCFET) device architecture whose unique geometry enables new scaling and optimization strategies for RF power and performance. Measured transistor values show excellent potential fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bd72ee3ab01143fb9e056ab59bc610e
https://doi.org/10.1109/led.2019.2917285
https://doi.org/10.1109/led.2019.2917285
Autor:
Mark Yu, Justin Parke, Brian Novak, Ken Nagamatsu, Robert S. Howell, Sourabh Khandelwal, Jordan Merkel, Patrick B. Shea
Publikováno v:
BCICTS
Accurate compact model for simulating radiofrequency (RF) switch characteristics of a Super Lattice Castellated Field Effect Transistor (SLCFET) is presented. The new model is developed by modifying the industry standard ASM-HEMT compact model formul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07508f3591adc8f87b78b98dfb648c71
https://doi.org/10.1109/bcicts48439.2020.9392941
https://doi.org/10.1109/bcicts48439.2020.9392941
Autor:
Robert S. Howell, Jordan Merkel, Shamima Afroz, Josephine B. Chang, Ken Nagamatsu, Brian Novak
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
Efficient, high power density RF signal amplification is a driving enabler for future RF systems. The Super-Lattice Castellated Field Effect Transistor (SLCFET) leverages a GaN-based superlattice to support multiple stacked 2D-Electron Gas (2DEG) lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83700717d1b5ca04f9aba2c23d9c59cb
https://doi.org/10.1109/ims30576.2020.9224099
https://doi.org/10.1109/ims30576.2020.9224099
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 525-534 (2018)
A 10.5 nm silicon doped HfO2 film is deposited and examined on three different bottom electrodes: a TiN electrode such as would be found in capacitive FeRAM, a lightly doped p-Si substrate as would be present in an FeFET, and an n+ Si electrode. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2bba650e5adfecbb02ab5082de775fd
https://ieeexplore.ieee.org/document/8337726/
https://ieeexplore.ieee.org/document/8337726/