Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jooyun Ha"'
Autor:
Taeho Jeon, Yujong Noh, Heejoung Park, Won-Sun Park, Chang-Hyuk Lee, Yo-Hwan Koh, In-Suk Yun, Chul-Woo Yang, Jinhaeng Lee, Moonsoo Sung, Sunghoon Ahn, Joong-Seob Yang, Yongdeok Cho, Hyunjong Jin, Sanghwan Kim, Jooyun Ha, Jeawon Choi, Chae-Kyu Jang, Sanghwa Chung, Byoung-In Joo, Jee-Yul Kim, Jeakwan Kwon, Sok-Kyu Lee, Jeong Byoung Kwan, Dae-Il Choi
Publikováno v:
IEEE Journal of Solid-State Circuits. 46:97-106
Novel program and read schemes are presented to break barriers in scaling of NAND flash memory such as threshold voltage endurance from floating gate interference, and charge loss tolerance. To enhance threshold voltage endurance and charge loss tole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::938db36a446a2369975e9808164fb78f
https://doi.org/10.1109/jssc.2010.2084450
https://doi.org/10.1109/jssc.2010.2084450
Autor:
Jinhaeng Lee, Sanghwan Kim, Chang-Hyuk Lee, Chae-Kyu Jang, Taeho Jeon, Dae-Il Choi, Yujong Noh, Jee-Yul Kim, Sok-Kyu Lee, Chul-Woo Yang, Yo-Hwan Koh, In-Suk Yun, Sunghoon Ahn, Hyunjong Jin, Byoung-In Joo, Jae-Kwan Kwon, Joong-Seob Yang, Jeawon Choi, Jooyun Ha, Won-Sun Park, Moonsoo Sung, Sanghwa Chung, Jeong Byoung Kwan, Yongdeok Cho
Publikováno v:
ISSCC
As NAND flash memory market grows rapidly in various application such as USB devices, MP3 players, SSD, cellular phone, cameras, there is a strong requirement of high density and low cost devices. Two different approaches studied to meet these requir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd8b878763855ffe3fb91eb71979b77e
https://doi.org/10.1109/isscc.2010.5433932
https://doi.org/10.1109/isscc.2010.5433932
Autor:
Changhyuk Lee, Sok-Kyu Lee, Sunghoon Ahn, Jinhaeng Lee, Wonsun Park, Yongdeok Cho, Chaekyu Jang, Chulwoo Yang, Sanghwa Chung, In-Suk Yun, Byoungin Joo, Byoungkwan Jeong, Jeeyul Kim, Jaekwan Kwon, Hyunjong Jin, Yujong Noh, Jooyun Ha, Moonsoo Sung, Daeil Choi, Sanghwan Kim
Publikováno v:
2010 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC); 2010, p446-447, 2p