Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Joost Waeterloos"'
Autor:
Paul E. Fischione, R. R. Cerchiara, Steven J. Rozeveld, Charlie Wood, Joseph M. Matesa, David W. Smith, A. C. Robins, E. Beach, J. J. Gronsky, Joost Waeterloos
Publikováno v:
Microscopy and Microanalysis. 11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7276426a3f53255a5fd46d4ecd0d3838
https://doi.org/10.1017/s143192760550463x
https://doi.org/10.1017/s143192760550463x
Autor:
G.J.A.M. Verheyden, A. Das, Gerald Beyer, Steven Demuynck, Herbert Struyf, Karen Maex, Rudy Caluwaerts, I. Vos, L. Carbonell, M. Van Hove, Francesca Iacopi, Joost Waeterloos, Romano Hoofman, Quoc Toan Le, Zsolt Tokei
Publikováno v:
Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695).
The creation of meso porosity in single damascene structures after patterning has been investigated to facilitate the sealing of the sidewalls by iPVD barriers. The dielectric stack consists of developmental porous SILK (v7) resin (SiLK is a trademar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f701bddc9497053e870a1dc4330aa43
https://doi.org/10.1109/iitc.2003.1219765
https://doi.org/10.1109/iitc.2003.1219765
Autor:
Karen Maex, G. Beyer, Roger Palmans, Herbert Struyf, Bart Coenegrachts, A. Van Ammel, Joost Waeterloos, H.W. Thompson, Lynn Forester, Iwan Vervoort, S. Vanhaelemeersch
Publikováno v:
Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).
In this article, the feasibility of via and trench etch of FLARE/sup TM/, a low-k organic material product from AlliedSignal Inc. in dual damascene architectures for 0.25 /spl mu/m applications is described. The effects of O/sub 2/ concentration and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7cc583f4ed922efb631069c414d4793
https://doi.org/10.1109/iitc.1999.787078
https://doi.org/10.1109/iitc.1999.787078
Autor:
Karen Maex, Bart Coenegrachts, G. Beyer, H. Meynen, M. A. Van Hove, Teng Gao, Joost Waeterloos
Publikováno v:
Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102).
A novel approach of via integration with nonetchback (NEB) SOG is investigated to improve performance of unlanded vias, which is a serious problem if zero-overlap metal lines are used. The improvement is attributed to the larger contact area between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1142848c43872e6d332f4fdb0bf3f401
https://doi.org/10.1109/iitc.1998.704747
https://doi.org/10.1109/iitc.1998.704747
Autor:
J. Van Aelst, Sergio Lucero, Werner Boullart, Geert Mannaert, Erik Sleeckx, Iwan Vervoort, R. A Donaton, Joost Waeterloos, Herbert Struyf, B. Sijmus, Marc Schaekers, Rudy Caluwaerts, Z. Tokel, Francesca Iacopi, Serge Vanhaelemeersch, M. Van Hove, Carine Alaerts, Marc Meuris, I. Vos, Karen Maex, J. Steenbergen, D.W. Castillo
Publikováno v:
Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).
The feasibility of integrating a SiLK* Semiconductor Dielectric film (*trademark of The Dow Chemical Company) that contains closed pores was studied using a single damascene test vehicle. The study focussed on tool qualification, process set-up and s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f6ad1a45f828e25bffb3cf0bee1251c
https://doi.org/10.1109/iitc.2001.930076
https://doi.org/10.1109/iitc.2001.930076
Autor:
Gerald Beyer, Joost Waeterloos, Iwan Vervoort, Herbert Struyf, Zsolt Tokei, D. Price, Jack E. Hetzner, R. A Donaton, T. M. Stokich, M. Iwashita, Bart Coenegrachts, L. Booms, I. Vos, E. O. Shaffer, T. Komiya, Rudy Caluwaerts, Karen Maex, B. Sijmus
Publikováno v:
Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).
The feasibility of integrating a low permittivity spin-on hardmask (SoHM) into a Cu dual damascene structure using SiLK* Semiconductor Resin (*trademark of The Dow Chemical Company) has been investigated. The study focussed on the replacement of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdfdc80784221452e4595004103b5519
https://doi.org/10.1109/iitc.2001.930017
https://doi.org/10.1109/iitc.2001.930017
Publikováno v:
Microscopy and Microanalysis. 9:874-875
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e3e98e3856bc4eb4e25d2322535a6fe
https://doi.org/10.1017/s1431927603444371
https://doi.org/10.1017/s1431927603444371
Autor:
Joost Waeterloos, Mikhail R. Baklanov, Moshe Judelewicz, Karen Maex, M Muroyama, Hai Wen Li, Serge Vanhaelemeersch, Eiichi Kondoh
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:2136
The thermodesorption from SiO2/SiLK resin dielectric assemblies at various stages of interconnect fabrication are studied by mass spectrometry. Species desorption from such an assembly is governed by the intrinsic material properties and the process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46ac36a829c69778dae73d7b6df89b1e
https://doi.org/10.1116/1.590883
https://doi.org/10.1116/1.590883
Autor:
Mikhail R. Baklanov, Joost Waeterloos, Karen Maex, Chantal Grégoire, Jean-Jacques Pireaux, Aparna Rajagopal, Serge Vanhaelemeersch, Jean-Jacques Lemaire
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:2336
The integration of copper and new low dielectric constant materials is a fundamental challenge to be met for further miniaturization of high speed integrated circuits. In this preliminary work, core level x-ray photoelectron spectroscopy (XPS) has be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c9a693fa639f591a938ed27172333f7
https://doi.org/10.1116/1.590914
https://doi.org/10.1116/1.590914