Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Joost Brouckaert"'
Autor:
Jeong Hwan Song, Tangla D. Kongnyuy, Mathias Prost, Aritrio Bandyopadhyay, Sarvagya Dwivedi, Diego Carbajal Altamirano, Cian Cummins, Sandeep Seema Saseendran, Philippe Helin, Joost Brouckaert, Marcus Dahlem
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 6, Pp 1-5 (2024)
We present the design and experimental evaluation of low-loss advanced bends in silicon nitride (SiN) waveguides for the C-band. The advanced bends, with a radius of 25 μm, exhibit a bending loss of approximately 0.025 dB per 90°, comparable to the
Externí odkaz:
https://doaj.org/article/1cac66d5e35d4edf8b0114609d37a672
Autor:
Gunther Roelkens, Dries Van Thourhout, Liu Liu, Roel Baets, Joost Brouckaert, Joris Van Campenhout
Publikováno v:
Journal of Nanoscience and Nanotechnology. 10:1461-1472
We review some opto-electronic devices based on the III-V/SOI heterogeneous integration platform, including lasers, modulators, wavelength converters, and photo-detectors. All of them are critical components for future on-chip interconnect and optica
Autor:
K. De Vos, Joost Brouckaert, D. Van Thourhout, Pieter Dumon, Roel Baets, Shankar Kumar Selvaraja, Wim Bogaerts
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics
We give an overview of recent progress in passive spectral filters and demultiplexers based on silicon-on-insulator photonic wire waveguides: ring resonators, interferometers, arrayed waveguide gratings, and echelle diffraction gratings, all benefit
Publikováno v:
JOURNAL OF LIGHTWAVE TECHNOLOGY
We show that a nanophotonic silicon-on-insulator (SOI) platform offers many advantages for the implementation of planar concave grating (PCG) demultiplexers, as compared with other material systems. We present for the first time the design and measur
Publikováno v:
Journal of Lightwave Technology. 25:1053-1060
We critically assess recent progress in the integration of near-infrared photodetectors onto nanophotonic silicon-on-insulator (SOI) waveguide circuits. Integration of thin-film InGaAs photodetectors is studied in detail. This method consists of bond
Autor:
Roel Baets, Benoit Batalliou, Gunther Roelkens, Dries Van Thourhout, Frederik Van Laere, Joost Brouckaert
Publikováno v:
ECS Transactions. 3:321-326
The bonding process of InP/InGaAsP dies to processed SOI using DVS-bis-BenzoCycloButene was developed. Surface preparation and the degree of planarization of bonding layers thinner than 300nm were optimized. Bonding strength and bonding quality was a
Autor:
Gunther Roelkens, MK Meint Smit, Joost Brouckaert, Van D Thourhout, Rgf Roel Baets, R Richard Nötzel
Publikováno v:
Journal of the Electrochemical Society, 153(12), G1015-G1019. Electrochemical Society, Inc.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
The process of bonding InP/InGaAsP dies to a processed silicon-on-insulator wafer using sub-300 nm layers of DVS-bis-benzocyclobutene (BCB) was developed. The planarization properties of these DVS-bis-BCB layers were measured and an optimal prebondin
Autor:
D. Van Thourhout, Shankar Kumar Selvaraja, Joost Brouckaert, Roel Baets, Pieter Dumon, Gunther Roelkens, Wim Bogaerts, Steven Verstuyft
Publikováno v:
IEEE Photonics Technology Letters. 21:1423-1425
In this letter, we demonstrate a compact and cost-effective four-channel demultiplexer with integrated photodetectors for application in coarse wavelength-division-multiplexing systems. The device consists of a silicon-on-insulator planar concave gra
Autor:
Roel Baets, Joost Brouckaert, Pieter Dumon, D. Van Thourhout, Shankar Kumar Selvaraja, Wim Bogaerts
Publikováno v:
IEEE Photonics Technology Letters. 20:309-311
We present measurement results of an ultracompact four-channel silicon-on-insulator planar concave grating demultiplexer fabricated in a complimentary metal-oxide-semiconductor line using deep-ultraviolet lithography. The demultiplexer has four outpu
Publikováno v:
IEEE Photonics Technology Letters. 19:1484-1486
We present measurement results of compact and efficient InAlAs-InGaAs metal-semiconductor-metal photodetectors integrated on silicon-on-insulator (SOI) waveguides. These thin-film devices are heterogeneously integrated on the SOI substrate by means o