Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Joongsik Kih"'
Autor:
Raehwan Yoon, Dongwoo Bae, Kiseog Kim, Sung S. Chung, Joongsik Kih, Hyeokjae Lee, Seungjoo Woo, Changhee Cho, Jonghoon Yoo, Stephen A. Wender, Youngboo Kim
Publikováno v:
IEEE Transactions on Nuclear Science. 70:815-822
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bf66ffd60bd567e4b95cc9d3f69cc76
https://doi.org/10.1109/tns.2023.3243555
https://doi.org/10.1109/tns.2023.3243555
Autor:
Dongwoo Bae, Kiseog Kim, Hyeokjae Lee, Sung S. Chung, Joongsik Kih, Seungjoo Woo, Changhee Cho, Saqib Ali Khan, Changheon Yang, Stephen A. Wender, Youngboo Kim
Publikováno v:
IEEE Transactions on Nuclear Science. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe2a1c7bbcca92f7aca2b174070b4319
https://doi.org/10.1109/tns.2023.3272918
https://doi.org/10.1109/tns.2023.3272918
Autor:
Yongmin Seong, Seungjoo Woo, Sungsoo Chung, Kiseog Kim, Yunho Kang, Youngboo Kim, Dongwoo Bae, Joongsik Kih
Publikováno v:
2021 IEEE Region 10 Symposium (TENSYMP).
Neutron induced single event failure mechanism in commercial SiC Schottky diode was researched with Single-Event Burnout(SEBO) radiation test equipment and precise fluence correlation and correction system. To evaluate and quantify the diode immunity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::955f80abce860e9b5236a84a373df42f
https://doi.org/10.1109/tensymp52854.2021.9550836
https://doi.org/10.1109/tensymp52854.2021.9550836
Publikováno v:
IEEE Journal of Solid-State Circuits. 29:978-981
A new high-density DRAM cell concept is proposed and experimentally demonstrated. This cell, composed of two transistors and one capacitor, generates a large bit line signal with a small cell capacitance during the read cycle. Since it does not need
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c266de1a4dc17f2624da39dc2abf6f40
https://doi.org/10.1109/4.297707
https://doi.org/10.1109/4.297707
Publikováno v:
IEEE Journal of Solid-State Circuits. 28:1350-1353
A class-AB large swing CMOS buffer amplifier with new error amplifier circuits is presented. The error amplifier accurately controls the quiescent current through the output transistors, thereby reducing the variation of the quiescent power dissipati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d68eb3aacdae2a124fe2445996c0bbbd
https://doi.org/10.1109/4.262009
https://doi.org/10.1109/4.262009
Publikováno v:
IEEE Journal of Solid-State Circuits. 28:162-164
A waveform-reshaping circuit that is conceived as an alternative to the conventional Schmitt trigger is introduced. This circuit employs ratioless inverters, which require no standby current and are for high-speed operations. Two different logic thre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4efbdb9405168bdb2ff4bd8e664525ad
https://doi.org/10.1109/4.192048
https://doi.org/10.1109/4.192048
Publikováno v:
2009 20th International Zurich Symposium on Electromagnetic Compatibility; 2009, p337-340, 4p
Publikováno v:
2005 IEEE Asian Solid-State Circuits Conference; 2005, p377-380, 4p
Publikováno v:
Proceedings of the 30th European Solid-State Circuits Conference; 2004, p379-382, 4p
Publikováno v:
Electronics Letters. 30:488-489
An analysis of the effect of the shape of the interconnection line on the signal propagation delay through a line is described. Minimum delay can be obtained by making a tapered line with its width being narrower in the direction of the signal propag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::906cefd36c82da72a2a3b0c89175a332
https://doi.org/10.1049/el:19940324
https://doi.org/10.1049/el:19940324