Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Joonghyun Park"'
Publikováno v:
Materials, Vol 12, Iss 11, p 1739 (2019)
We investigated the characteristics of excimer laser-annealed polycrystalline silicon−germanium (poly-Si1−xGex) thin film and thin-film transistor (TFT). The Ge concentration was increased from 0% to 12.3% using a SiH4 and GeH4 gas mixture, and a
Externí odkaz:
https://doaj.org/article/530bf11cb2cc4fc1b4ebef8090d76abc
Publikováno v:
Materials, Vol 12, Iss 1, p 161 (2019)
We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The intrinsic a-Si:H layer was
Externí odkaz:
https://doaj.org/article/8a731a1e36cc4c12b05f5319414cd705
Autor:
Joonghyun Park, Myunghun Shin
Publikováno v:
Energies, Vol 11, Iss 7, p 1785 (2018)
The band structure characteristics of a copper indium gallium sulfur selenide (Cu(In1–xGax)SeS, CIGS) solar cell incorporating a cadmium-free zinc sulfide (ZnS) buffer layer were investigated using technology computer-aided design simulations. Cons
Externí odkaz:
https://doaj.org/article/3faf3b8b618242889ad5c96df75b0d87
Autor:
Myunghun Shin, Joonghyun Park
Publikováno v:
IEICE Transactions on Electronics. :95-98
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccf1ec40bcbbe1a87dbd5ee024c7bb30
https://doi.org/10.1587/transele.e102.c.95
https://doi.org/10.1587/transele.e102.c.95
Publikováno v:
Solid-State Electronics. 148:20-26
Thin film transistors have become crucial components of several electronic display devices. However, high leakage current is a frustrating impediment to increasing the efficiency of these transistors. We have performed an experimental and quantitativ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14758c6dc0dd5da49e3ca9f25de57c1d
https://doi.org/10.1016/j.sse.2018.07.009
https://doi.org/10.1016/j.sse.2018.07.009
Publikováno v:
Nanomaterials, Vol 9, Iss 5, p 784 (2019)
Nanomaterials
Volume 9
Issue 5
Nanomaterials
Volume 9
Issue 5
We fabricated the transparent non-volatile memory (NVM) of a bottom gate thin film transistor (TFT) for the integrated logic devices of display applications. The NVM TFT utilized indium&ndash
tin&ndash
zinc&ndash
oxide (ITZO) as an act
tin&ndash
zinc&ndash
oxide (ITZO) as an act
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4186eac4c2a73d0817fce4ff9eefbefb
https://www.mdpi.com/2079-4991/9/5/784
https://www.mdpi.com/2079-4991/9/5/784
Publikováno v:
Materials Science in Semiconductor Processing. 120:105253
We fabricate amorphous indium–tin–zinc oxide (ITZO) thin film transistors (TFTs), in which the source/drain (S/D) electrodes are composed of metallic Al and nickel Ni. We experimentally investigate the contact characteristics of Al and Ni S/D ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11c786311fd0c02a6dfe0e03e46d6b53
https://doi.org/10.1016/j.mssp.2020.105253
https://doi.org/10.1016/j.mssp.2020.105253
Publikováno v:
Materials
Materials, Vol 12, Iss 1, p 161 (2019)
Volume 12
Issue 1
Materials, Vol 12, Iss 1, p 161 (2019)
Volume 12
Issue 1
We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The intrinsic a-Si:H layer was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a582f8426c74e99a112bf02ccd10a391
https://pubmed.ncbi.nlm.nih.gov/30621000
https://pubmed.ncbi.nlm.nih.gov/30621000