Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Joonggyu Kim"'
Publikováno v:
IEEE Electron Device Letters. 44:931-934
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9762a9ecf3d17c64a850a554e907eeae
https://doi.org/10.1109/led.2023.3265986
https://doi.org/10.1109/led.2023.3265986
Autor:
Hamza Zad Gul, Seong Chu Lim, Wonkil Sakong, Jinbao Jiang, Dongseok Suh, Mohan Kumar Ghimire, Min-Kyu Joo, Hojoon Yi, Hyunjin Ji, Gwanmu Lee, Yoojoo Yun, Joonggyu Kim
Publikováno v:
ACS Applied Materials & Interfaces. 11:29022-29028
The transport behaviors of MoS2 field-effect transistors (FETs) with various channel thicknesses are studied. In a 12 nm thick MoS2 FET, a typical switching behavior is observed with an Ion/Ioff ra...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc40522ea835d0d889cf190ac38a4287
https://doi.org/10.1021/acsami.9b06715
https://doi.org/10.1021/acsami.9b06715
Publikováno v:
ACS Applied Materials & Interfaces. 11:4226-4232
The advanced Hall magnetic sensor using an ion-gated graphene field-effect transistor demonstrates a high current-normalized sensitivity larger than 3000 V/AT and low operation voltages smaller than 0.5 V. From commercially available graphene-on-SiO2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c5e324d8efcf13b16f8dbf4204ded3b
https://doi.org/10.1021/acsami.8b17869
https://doi.org/10.1021/acsami.8b17869
Autor:
Hyunjin, Ji, Mohan Kumar, Ghimire, Gwanmu, Lee, Hojoon, Yi, Wonkil, Sakong, Hamza Zad, Gul, Yoojoo, Yun, Jinbao, Jiang, Joonggyu, Kim, Min-Kyu, Joo, Dongseok, Suh, Seong Chu, Lim
Publikováno v:
ACS applied materialsinterfaces. 11(32)
The transport behaviors of MoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::100a2843972f2c49622b91cb3b961c6e
https://pubmed.ncbi.nlm.nih.gov/31313897
https://pubmed.ncbi.nlm.nih.gov/31313897
Autor:
Yoojoo Yun, Haeyong Kang, Dongsub Chung, Young Hee Lee, Jeongmin Park, Jeong-Gyun Kim, Joonggyu Kim, Dongseok Suh
Publikováno v:
Current Applied Physics. 15:1184-1187
To fabricate a BN-sandwiched multilayer graphene field-effect transistor, we developed a self-aligned contact scheme in combination with optimized stamping processes for the stacking of two-dimensional (2D) materials. By using a self-aligned contact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aec3881478313e2e7ba13da78ba9355
https://doi.org/10.1016/j.cap.2015.07.001
https://doi.org/10.1016/j.cap.2015.07.001
Autor:
Van Luan Nguyen, Young Hee Lee, Joonggyu Kim, Jihoon Park, Min-Kyu Joo, Ki Kang Kim, Dongseok Suh
Publikováno v:
ACS nano. 10(9)
A graphene Hall element (GHE) is an optimal system for a magnetic sensor because of its perfect two-dimensional (2-D) structure, high carrier mobility, and widely tunable carrier concentration. Even though several proof-of-concept devices have been p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2306bd675744fa3dd93012392e8ffd82
https://pubmed.ncbi.nlm.nih.gov/27580305
https://pubmed.ncbi.nlm.nih.gov/27580305
Autor:
Haeyong Kang, Sangwook Lee, Jeong Gyun Kim, Yoojoo Yun, Dongseok Suh, Jeongmin Park, Nahee Park, Young Hee Lee, Joonggyu Kim, Hoyeol Yun, Thuy Kieu Truong
Publikováno v:
Nanotechnology. 26(34)
The combination of quantum Hall conductance and charge-trap memory operation was qualitatively examined using a graphene field-effect transistor. The characteristics of two terminal quantum Hall conductance appeared clearly on the background of a hug
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f368d39b4f10e896581b7845f346e7d7
https://pubmed.ncbi.nlm.nih.gov/26242388
https://pubmed.ncbi.nlm.nih.gov/26242388
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 27(37)
A MoSe2 p-n diode with a van der Waals homojunction is demonstrated by stacking undoped (n-type) and Nb-doped (p-type) semiconducting MoSe2 synthesized by chemical vapor transport for Nb substitutional doping. The p-n diode reveals an ideality factor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1701444770e28befcda8eb9ac432f3e9
https://pubmed.ncbi.nlm.nih.gov/26293986
https://pubmed.ncbi.nlm.nih.gov/26293986
Publikováno v:
2D Materials. 4:021029
A Hall effect sensor is an analog transducer that detects a magnetic flux. The general requirements for its high magnetic sensitivity in conventional semiconductors are high carrier mobility and ultra-thin conduction channel in the material's and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73ce8b9aae058bc53f1dbd4d6aba8fbb
https://doi.org/10.1088/2053-1583/aa735d
https://doi.org/10.1088/2053-1583/aa735d
Autor:
Dongseok Suh, Thuy Kieu Truong, Doo Hyun Yoon, Haeyong Kang, Young Hee Lee, Yourack Lee, Joonggyu Kim, Eun Sung Kim, Jeongmin Park, Jeong-Gyun Kim
Publikováno v:
Advanced Functional Materials. 27:1701108
Flexible superconducting yarns consisting of sputter-deposited NbN nanowires on highly aligned carbon nanotube (CNT) array sheets are reported. In the microscopic view, the NbN nanowires are formed on top of individual CNT fibrils, and the supercondu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f313ce977e49fcf9486831bc45a7a394
https://doi.org/10.1002/adfm.201701108
https://doi.org/10.1002/adfm.201701108