Výsledky vyhledávání - "Joonas Isometsä"

Akademický článek

Surface Passivation of Germanium with ALD Al2O3: Impact of Composition and Crystallinity of GeOx Interlayer

Autor: Joonas Isometsä, Zahra Jahanshah Rad, Tsun H. Fung, Hanchen Liu, Juha-Pekka Lehtiö, Toni P. Pasanen, Oskari Leiviskä, Mikko Miettinen, Pekka Laukkanen, Kalevi Kokko, Hele Savin, Ville Vähänissi

Publikováno v: Crystals, Vol 13, Iss 4, p 667 (2023)

Germanium is an excellent material candidate for various applications, such as field effect transistors and radiation detectors/multijunction solar cells, due to its high carrier mobilities and narrow bandgap, respectively. However, the efficient pas

Externí odkaz: https://doaj.org/article/8eee7eeb28bc4cb79d51591e4741e569

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Akademický článek

Achieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O3

Autor: Joonas Isometsä, Tsun Hang Fung, Toni P. Pasanen, Hanchen Liu, Marko Yli-koski, Ville Vähänissi, Hele Savin

Publikováno v: APL Materials, Vol 9, Iss 11, Pp 111113-111113-7 (2021)

Desirable intrinsic properties, namely, narrow bandgap and high carrier mobility, make germanium (Ge) an excellent candidate for various applications, such as radiation detectors, multi-junction solar cells, and field effect transistors. Nevertheless

Externí odkaz: https://doaj.org/article/bd532dc1f16748809a790a0a9f15e4db

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Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium

Autor: Hanchen Liu, Toni P. Pasanen, Oskari Leiviskä, Joonas Isometsä, Tsun Hang Fung, Marko Yli-Koski, Mikko Miettinen, Pekka Laukkanen, Ville Vähänissi, Hele Savin

Publikováno v: Applied Physics Letters. 122

The excellent field-effect passivation provided by aluminum oxide (Al2O3) on germanium surfaces relies on the high negative fixed charge present in the film. However, in many applications, a neutral or a positive charge would be preferred. Here, we i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14de0e82623a558a070877d4afba73f5
https://doi.org/10.1063/5.0152652

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Efficient surface passivation of germanium nanostructures with 1% reflectance

Autor: Tsun Hang Fung, Joonas Isometsä, Juha-Pekka Lehtiö, Toni Pasanen, Hanchen Liu, Oskari Leiviska, Pekka Laukkanen, Hele Savin, Ville Vähänissi

Publikováno v: Nanotechnology.

Germanium (Ge) is a vital element for applications that operate in near-infrared wavelengths. Recent progress in developing nanostructured Ge surfaces has resulted in > 99 % absorption in a wide wavelength range (300 nm- 1700 nm), promising unprecede

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b2ef64497d5c709b18e48ed5cf1d28c1
https://doi.org/10.1088/1361-6528/acd25b

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Efficient photon capture on germanium surfaces using industrially feasible nanostructure formation

Autor: Ville Vähänissi, Hele Savin, Joonas Isometsä, Kexun Chen, Toni P. Pasanen

Publikováno v: Nanotechnology. 32(3)

Nanostructured surfaces are known to provide excellent optical properties for various photonics devices. Fabrication of such nanoscale structures to germanium (Ge) surfaces by metal assisted chemical etching (MACE) is, however, challenging as Ge surf

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c66e2877799f8e41a97582e1cf01f6a4
https://pubmed.ncbi.nlm.nih.gov/33022667

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Nanostructured Germanium with >99% Absorption at 300–1600 nm Wavelengths

Autor: Joonas Isometsä, Ville Vähänissi, Kexun Chen, M. Garín, Hele Savin, Toni P. Pasanen

Publikováno v: Advanced Optical Materials. 8:2000047

Near-infrared (NIR) sensors find numerous applications within various industry fields, including optical communications and medical diagnostics. However, the state-of-the-art NIR sensors made of germanium (Ge) suffer from rather poor response, largel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e45d10564eca88f98a50ca2840f671e0
https://doi.org/10.1002/adom.202000047

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