Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Joon-hoo Choi"'
Publikováno v:
Journal of Non-Crystalline Solids. 354:2509-2512
We investigated the electrical properties of polycrystalline silicon (poly-Si) thin film transistors (TFTs) employing field-enhanced solid phase crystallization (FESPC). An n+ amorphous silicon (n+ a-Si) layer was deposited to improve the contact res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f2c6dd5180a17a383780f5b2d4cb50e
https://doi.org/10.1016/j.jnoncrysol.2007.09.083
https://doi.org/10.1016/j.jnoncrysol.2007.09.083
Autor:
Won-Kyu Lee, Joon-hoo Choi, Jae-Hoon Lee, Kyuha Chung, Sung-Hwan Choi, Hyun-Sang Park, Min-Koo Han, Joon-Chul Goh
Publikováno v:
SID Symposium Digest of Technical Papers. 38:165-168
Highly stable voltage programmed a-Si:H TFT pixel circuit for AMOLED, which employs both Vth-compensation and negative bias annealing, is proposed and fabricated. Experimental results, after 60 hours electrical stress at elevated temperature (60°C)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c94c1a9e706ad73c67630228a5be04e2
https://doi.org/10.1889/1.2785254
https://doi.org/10.1889/1.2785254
Autor:
Jong-Moo Huh, Jae-Hong Jeon, Sang-Geun Park, Kyuha Chung, Joon-Chul Goh, Joon-hoo Choi, Jae-Hoon Lee, Min-Koo Han
Publikováno v:
Japanese Journal of Applied Physics. 46:1350-1353
We propose and fabricate a new hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) pixel employing a fraction time annealing (FTA), which can supply a negative gate bias during a fraction time of each frame rather than the entire whole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baf3a181b7b4af4c4311881a1a1e529f
https://doi.org/10.1143/jjap.46.1350
https://doi.org/10.1143/jjap.46.1350
Autor:
Jae-Hong Jeon, Sang-Geun Park, Kyuha Chung, Min-Koo Han, Joon-Chul Goh, Joon-hoo Choi, Jae-Hoon Lee
Publikováno v:
ECS Transactions. 3:287-292
The new a-Si:H TFT pixel circuit, which successfully suppresses OLED current error caused by the hysteresis of a-Si:H TFT, is proposed and fabricated.When an identical VGS and VDS is applied to a-Si:H TFT device, the drain current of a-Si:H TFT is al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::962e50139ab36e23ba26c36579bf289e
https://doi.org/10.1149/1.2356365
https://doi.org/10.1149/1.2356365
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 505:155-158
In this paper, we introduce a new 36×43 cm 2 amorphous silicon flat-panel detector for digital radiography. A prototype flat-panel detector was fabricated using a p–i–n photodiode/thin-film transistor (TFT) array. The main difference of this fla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b0755890fe6b12fe9fcb1cdac7906a4
https://doi.org/10.1016/s0168-9002(03)01040-4
https://doi.org/10.1016/s0168-9002(03)01040-4
Autor:
Joon-hoo Choi, Hyung-Ik Lee, Joon-Suc Jang, Jinyool Kim, J. K. Chee, Young-Chul Park, J. M. Kim, B. H. Jung, J. H. You, Gyeong-Su Park, Y. W. Jin, Eun Soo Lee, Jung-Pyo Hong, Nam-Geol Lee, Sanguhn Cha, J.E. Jung, S. H. Kang
Publikováno v:
SID Symposium Digest of Technical Papers. 31:674-677
Oxidation and chemical modification of molybdenum micro tip surface have been investigated to understand the performance degradation mechanism of field emitter arrays(FEAs). Molybdenum FEAs could be easily oxidized due to their interaction with oxyge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b2a81f888a8da2a0b0902192ac6f623
https://doi.org/10.1889/1.1833038
https://doi.org/10.1889/1.1833038
Autor:
Kunal Girotra, Jong-Moo Huh, Joon-hoo Choi, Hong Chen, Jun H. Souk, A. Abramov, Chiwoo Kim, Pere Roca i Cabarrocas, Seung-Kyu Park, Kyong-Tae Park
Publikováno v:
Japanese Journal of Applied Physics. 47:7308-7310
Despite many years of research on microcrystalline silicon films, these materials have not yet found industrial application as thin film transistors. We discuss difficulties in their accurate characterization and compare the advantages and disadvanta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::792a99642a1a8cea82fc0c4e5ccd3d52
https://doi.org/10.1143/jjap.47.7308
https://doi.org/10.1143/jjap.47.7308
Autor:
Joon-hoo Choi, J. S. Hwang, Sung Hoon Hong, Dong-Won Ahn, Sungwoo Hwang, B.-H. Jeon, H. K. Kim
Publikováno v:
Applied Physics Letters. 85:1636-1638
We demonstrate the effect of Ti thickness on the contact resistance between GaN nanowires and Ti∕Au electrodes. We have carried out systematic characterization of many GaN nanowires contacted by various Ti∕Au electrodes. We conclude that the aver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4cc381080f570ae0bdc3028628684ed
https://doi.org/10.1063/1.1786367
https://doi.org/10.1063/1.1786367
Publikováno v:
IEEE Electron Device Letters. 25:381-383
Thin-film transistor liquid crystal display (TFT-LCD) panels of a high transmittance structure were fabricated by using a low-/spl kappa/ dielectric film as a passivation layer. The low-dielectric films were successfully deposited and patterned using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0da9fb18b90fe996f5ffce96e74ae2c
https://doi.org/10.1109/led.2004.828957
https://doi.org/10.1109/led.2004.828957
Publikováno v:
Applied Physics Letters. 80:4843-4845
In this letter, we report the leakage current of amorphous silicon (a-Si:H) p-i-n photodiodes, of which the p layer is formed by ion shower doping. The ion shower doping technique has an advantage over plasma-enhanced chemical vapor deposition (PECVD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c969dc2594c43fe76c4bd523c35b7761
https://doi.org/10.1063/1.1489485
https://doi.org/10.1063/1.1489485