Zobrazeno 1 - 10
of 177
pro vyhledávání: '"Joon Yun, A"'
Autor:
Marti Checa, Addis S. Fuhr, Changhyo Sun, Rama Vasudevan, Maxim Ziatdinov, Ilia Ivanov, Seok Joon Yun, Kai Xiao, Alp Sehirlioglu, Yunseok Kim, Pankaj Sharma, Kyle P. Kelley, Neus Domingo, Stephen Jesse, Liam Collins
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-12 (2023)
Abstract Unraveling local dynamic charge processes is vital for progress in diverse fields, from microelectronics to energy storage. This relies on the ability to map charge carrier motion across multiple length- and timescales and understanding how
Externí odkaz:
https://doaj.org/article/f94c5350d15f4e1cb06d448ce809943d
Autor:
Yong-Gyun Kim, Sungjoon Kim, Jae Hyeon Park, Seung Yang, Minkyu Jang, Yeo Joon Yun, Jae-sung Cho, Sungmin You, Seong-Ho Jang
Publikováno v:
Sensors, Vol 24, Iss 14, p 4504 (2024)
Accurate prediction of scoliotic curve progression is crucial for guiding treatment decisions in adolescent idiopathic scoliosis (AIS). Traditional methods of assessing the likelihood of AIS progression are limited by variability and rely on static m
Externí odkaz:
https://doaj.org/article/823e2b1d36b343d1ab35aeb1a9f0c5ad
Autor:
Riya Sebait, Roberto Rosati, Seok Joon Yun, Krishna P. Dhakal, Samuel Brem, Chandan Biswas, Alexander Puretzky, Ermin Malic, Young Hee Lee
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-9 (2023)
Abstract We report the emergence of dark-excitons in transition-metal-dichalcogenide (TMD) heterostructures that strongly rely on the stacking sequence, i.e., momentum-dark K-Q exciton located exclusively at the top layer of the heterostructure. The
Externí odkaz:
https://doaj.org/article/b4711f52bbe341899217fac3d920a8a6
Autor:
Yunseok Kwak, Won Joon Yun, Jae Pyoung Kim, Hyunhee Cho, Jihong Park, Minseok Choi, Soyi Jung, Joongheon Kim
Publikováno v:
ICT Express, Vol 9, Iss 3, Pp 486-491 (2023)
Although deep learning (DL) has already become a state-of-the-art technology for various data processing tasks, data security and computational overload problems often arise due to their high data and computational power dependency. To solve this pro
Externí odkaz:
https://doaj.org/article/636e228595e04231b713f26c6b87b245
Autor:
Chanwoo Lee, Byeong Geun Jeong, Sung Hyuk Kim, Dong Hyeon Kim, Seok Joon Yun, Wooseon Choi, Sung-Jin An, Dongki Lee, Young-Min Kim, Ki Kang Kim, Seung Mi Lee, Mun Seok Jeong
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-9 (2022)
Abstract Nanoscale defects in two-dimensional (2D) transition metal dichalcogenides (TMDs) alter their intrinsic optical and electronic properties, and such defects require investigation. Atomic-resolution techniques such as transmission electron mic
Externí odkaz:
https://doaj.org/article/192d1b4a7e7647f1855bfe5e3672e100
Autor:
Soo Ho Choi, Seok Joon Yun, Yo Seob Won, Chang Seok Oh, Soo Min Kim, Ki Kang Kim, Young Hee Lee
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-5 (2022)
The industrial application of two-dimensional (2D) materials strongly depends on the large-scale manufacturing of high-quality 2D films and powders. Here, the authors analyze three state-of-the art mass production techniques, discussing the recent pr
Externí odkaz:
https://doaj.org/article/13deba8b919945529d3426f8679d5776
Autor:
Sunil Kumar, Arvind Singh, Anand Nivedan, Sandeep Kumar, Seok Joon Yun, Young Hee Lee, Marc Tondusson, Jérôme Degert, Jean Oberle, Eric Freysz
Publikováno v:
Nano Select, Vol 2, Iss 10, Pp 2019-2028 (2021)
Abstract Monolayers of transition metal dichalcogenides are semiconducting materials which offer many prospects in optoelectronics. A monolayer of molybdenum disulfide (MoS2) has a direct bandgap of 1.88 eV. Hence, when excited with optical photon en
Externí odkaz:
https://doaj.org/article/b2a2bdb9c7a74cadacc53caa16c732a0
Publikováno v:
ICT Express, Vol 7, Iss 1, Pp 1-4 (2021)
The urban aerial mobility (UAM) system, such as drone taxi or air taxi, is one of future on-demand transportation networks. Among them, electric vertical takeoff and landing (eVTOL) is one of UAM systems that is for identifying the locations of passe
Externí odkaz:
https://doaj.org/article/1942cc4805ce4897adbdd80a64135260
Autor:
Sang‐Hyeok Yang, Wooseon Choi, Byeong Wook Cho, Frederick Osei‐Tutu Agyapong‐Fordjour, Sehwan Park, Seok Joon Yun, Hyung‐Jin Kim, Young‐Kyu Han, Young Hee Lee, Ki Kang Kim, Young‐Min Kim
Publikováno v:
Advanced Science, Vol 8, Iss 16, Pp n/a-n/a (2021)
Abstract Atomic dopants and defects play a crucial role in creating new functionalities in 2D transition metal dichalcogenides (2D TMDs). Therefore, atomic‐scale identification and their quantification warrant precise engineering that widens their
Externí odkaz:
https://doaj.org/article/6003e2c1bc4b4a29918a9debd16cdd7e
Autor:
Frederick Osei‐Tutu Agyapong‐Fordjour, Seok Joon Yun, Hyung‐Jin Kim, Wooseon Choi, Balakrishnan Kirubasankar, Soo Ho Choi, Laud Anim Adofo, Stephen Boandoh, Yong In Kim, Soo Min Kim, Young‐Min Kim, Young Hee Lee, Young‐Kyu Han, Ki Kang Kim
Publikováno v:
Advanced Science, Vol 8, Iss 16, Pp n/a-n/a (2021)
Abstract Among transition metal dichalcogenides (TMdCs) as alternatives for Pt‐based catalysts, metallic‐TMdCs catalysts have highly reactive basal‐plane but are unstable. Meanwhile, chemically stable semiconducting‐TMdCs show limiting cataly
Externí odkaz:
https://doaj.org/article/fee52419c95d4627b64b9a5b5be33b9b