Zobrazeno 1 - 10
of 94
pro vyhledávání: '"Joon Young Kwak"'
Autor:
Md Mobaidul Islam, Arqum Ali, Chanju Park, Taebin Lim, Dong Yeon Woo, Joon Young Kwak, Jin Jang
Publikováno v:
Communications Materials, Vol 5, Iss 1, Pp 1-11 (2024)
Abstract Ferroelectric (FE) field-effect transistors are interesting for their non-destructive readout characteristic and energy efficiency but are difficult to integrate on silicon platforms. Here, FE ZrXAl1−XOY (ZAO) is demonstrated by compressiv
Externí odkaz:
https://doaj.org/article/f464969b1c3d44e883b1b45f0fb5def2
Autor:
Jeongwon Park, Seung Jae Kwak, Sumin Kang, Saeyoung Oh, Bongki Shin, Gichang Noh, Tae Soo Kim, Changhwan Kim, Hyeonbin Park, Seung Hoon Oh, Woojin Kang, Namwook Hur, Hyun-Jun Chai, Minsoo Kang, Seongdae Kwon, Jaehyun Lee, Yongjoon Lee, Eoram Moon, Chuqiao Shi, Jun Lou, Won Bo Lee, Joon Young Kwak, Heejun Yang, Taek-Mo Chung, Taeyong Eom, Joonki Suh, Yimo Han, Hu Young Jeong, YongJoo Kim, Kibum Kang
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract The advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices. Recently, area-selective atomic layer deposition (AS-ALD), which allows the direc
Externí odkaz:
https://doaj.org/article/55b0b490549943fb9f81834d5ed9a8de
Autor:
Keonhee Kim, Jae Gwang Lim, Su Man Hu, Yeonjoo Jeong, Jaewook Kim, Suyoun Lee, Joon Young Kwak, Jongkil Park, Gyu Weon Hwang, Kyeong-Seok Lee, Seongsik Park, Wook-Seong Lee, Byeong-Kwon Ju, Jong Keuk Park, Inho Kim
Publikováno v:
NPG Asia Materials, Vol 15, Iss 1, Pp 1-12 (2023)
Abstract Various memristive devices have been proposed for use in neuromorphic computing systems as artificial synapses. Analog synaptic devices with linear conductance updates during training are efficiently essential to train neural networks. Altho
Externí odkaz:
https://doaj.org/article/ed99fdcc465b48af8a944eb98846a6bd
Autor:
Dong Yeon Woo, Gichang Noh, Eunpyo Park, Min Jee Kim, Dae Kyu Lee, Yong Woo Sung, Jaewook Kim, YeonJoo Jeong, Jongkil Park, Seongsik Park, Hyun Jae Jang, Nakwon Choi, Yooyeon Jo, Joon Young Kwak
Publikováno v:
Neuromorphic Computing and Engineering, Vol 4, Iss 3, p 034001 (2024)
In-memory computing facilitates efficient parallel computing based on the programmable memristor crossbar array. Proficient hardware image processing can be implemented by utilizing the analog vector-matrix operation with multiple memory states of th
Externí odkaz:
https://doaj.org/article/e65cc0538c2047459f6f564baab9d4da
Autor:
Jaehyun Kang, Taeyoon Kim, Suman Hu, Jaewook Kim, Joon Young Kwak, Jongkil Park, Jong Keuk Park, Inho Kim, Suyoun Lee, Sangbum Kim, YeonJoo Jeong
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-10 (2022)
Conventional filamentary memristors are limited in dynamics by the high electric-field dependence of the conductive filament. Here, Jeong et al. presents a method which creates a cluster-type memristor, enabling large conductance range and long data
Externí odkaz:
https://doaj.org/article/558f28d63b5a48aa853dc0f5eca0a3c2
Autor:
Suman Hu, Jaehyun Kang, Taeyoon Kim, Suyoun Lee, Jong Keuk Park, Inho Kim, Jaewook Kim, Joon Young Kwak, Jongkil Park, Gyu-Tae Kim, Shinhyun Choi, Yeonjoo Jeong
Publikováno v:
IEEE Access, Vol 10, Pp 6381-6392 (2022)
Neuromorphic hardware is a system with massive potential to enable efficient computing by mimicking the human brain. The novel system processes information using neuron spikes (Action Potentials) and the synaptic connections between neurons are train
Externí odkaz:
https://doaj.org/article/9030bff590784dcdbd0f7d3f2ca677cb
Autor:
Minkyung Kim, Eunpyo Park, Jongkil Park, Jaewook Kim, YeonJoo Jeong, Suyoun Lee, Inho Kim, Jong-Keuk Park, Sung-Yun Park, Joon Young Kwak
Publikováno v:
Results in Physics, Vol 38, Iss , Pp 105620- (2022)
This study investigates the triple-level cell (TLC) memory retention of a MoS2-channel based charge trap flash (CTF) device. A top-gated CTF device with a high-κ gate dielectric is found to have a high coupling ratio, which enhances the tunneling ef
Externí odkaz:
https://doaj.org/article/87d00fcd5a6b43e69466853590bfcd3c
Autor:
Hyo-Seung Park, Jongkil Park, Joon Young Kwak, Gyu-Weon Hwang, Doo-Seok Jeong, Kyeong-Seok Lee
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract A novel nano-plasmonic sensing platform based on vertical conductive bridge was suggested as an alternative geometry for taking full advantages of unique properties of conductive junction while substantially alleviating burdens in lithograph
Externí odkaz:
https://doaj.org/article/3d17c6e70b1d4740bb80e5db7927f5f1
Publikováno v:
Results in Physics, Vol 24, Iss , Pp 104156- (2021)
Pulsed current–voltage characteristics have been measured for CVD monolayer graphene and exfoliated MoS2 on HfO2 and Al2O3 (sapphire) under controlled lattice temperature conditions. The unintentional donor density in MoS2 is 3.6 × 1011cm−3 and
Externí odkaz:
https://doaj.org/article/27557c0b7578479383eebf88fa9d287a
Autor:
Taeyoon Kim, Suman Hu, Jaewook Kim, Joon Young Kwak, Jongkil Park, Suyoun Lee, Inho Kim, Jong-Keuk Park, YeonJoo Jeong
Publikováno v:
Frontiers in Computational Neuroscience, Vol 15 (2021)
Among many artificial neural networks, the research on Spike Neural Network (SNN), which mimics the energy-efficient signal system in the brain, is drawing much attention. Memristor is a promising candidate as a synaptic component for hardware implem
Externí odkaz:
https://doaj.org/article/8205df68ea0c40e88455dee99edc8d82