Výsledky vyhledávání - "Joon Pyo Kim"

Akademický článek

Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics

Autor: Bong Ho Kim, Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Chan Jik Lee, Dae‐Myeong Geum, Young Joon Yoon, Sang Hyeon Kim

Publikováno v: Advanced Electronic Materials, Vol 10, Iss 1, Pp n/a-n/a (2024)

Abstract The study demonstrates HfZrOx (HZO)‐based Si ferroelectric field‐effect transistors (FeFETs) with a low operating voltage (1.5 V) and immediate read‐after‐write operation (100 ns) via HZO thickness scaling, electron‐beam‐irradiat

Externí odkaz: https://doaj.org/article/f9b6aae35a3049e9b8b5aadcc75f6987

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Akademický článek

Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

Autor: Bong Ho Kim, Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Dae‐Myeong Geum, Seung‐Hyub Baek, Sang Hyeon Kim

Publikováno v: Advanced Electronic Materials, Vol 9, Iss 5, Pp n/a-n/a (2023)

Abstract The authors demonstrate improved switching voltage, retention, and endurance properties in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen scavenging. Oxygen scavenging using titanium (Ti) in the gate

Externí odkaz: https://doaj.org/article/13530e7de0bd4393bcea090cda1c95ab

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