Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Joohei Lee"'
Autor:
Bong Seop Yang, Myung Soo Huh, Jaeyeong Heo, Cheol Seong Hwang, Hyeong Joon Kim, Kap-Soo Yoon, Sung-Hoon Yang, Sang Jin Han, Joohei Lee
Publikováno v:
Thin Solid Films. 518:1170-1173
The improved structural and electrical properties of tin-oxide films produced by using ultralow-pressure sputtering (ULPS) method are reported. The Hall mobility of the film (~ 13 cm2/V s) deposited using ULPS was about 1.5 times higher than that of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b1f89593c211e79951dce67c643c1f5
https://doi.org/10.1016/j.tsf.2009.05.051
https://doi.org/10.1016/j.tsf.2009.05.051
Publikováno v:
Integrated Ferroelectrics. 23:65-75
Pb(Zr, Ti)O3 (PZT) thin films were deposited on various Pt substrates using a Pb(Zr0.63, Ti0.37)O3 and a Pb target by rf magnetron sputtering. The preferred orientation of PZT films was significantly influenced by a structure of Pt electrode. (100)-o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27c761771397e6c8b7052c1cf5cf7883
https://doi.org/10.1080/10584589908210140
https://doi.org/10.1080/10584589908210140
Publikováno v:
Thin Solid Films. 341:216-220
A novel processing sequence for the formation of gated diamond field emitter array (triode system) is proposed and the feasibility is tested by investigating the field emission property. The processing scheme is based on the selective deposition of d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15e0adceb831e2ea1cd89c85633f5eb0
https://doi.org/10.1016/s0040-6090(98)01548-x
https://doi.org/10.1016/s0040-6090(98)01548-x
Autor:
Jae Kyeong Jeong, Joohei Lee, Cheol Seong Hwang, Kap-Soo Yoon, Hyeong Joon Kim, Bong Seop Yang, Seung Ha Oh, Myung Soo Huh
Publikováno v:
Electrochemical and Solid-State Letters. 12:H385
Thin-film transistors (TFTs) were fabricated with an aluminum oxide-doped tin oxide (SAO) channel, deposited by cosputtering SnO 2 and Al 2 O 3 targets. The effect of the Al 2 O 3 content on the device performance of the SnO x -based TFTs was investi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94152e49e9fc5e5706158744708beeb8
https://doi.org/10.1149/1.3194251
https://doi.org/10.1149/1.3194251