Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Joo-Sun Choi"'
Autor:
Joo Sun Choi
Publikováno v:
Clinical Nutrition Research
The defective satiation signaling may contribute to the etiology of obesity. We investigated how dietary modification during maternal (pregnancy and lactation) and post-weaning affects obesity, insulin resistance (IR) and hypothalamic appetite respon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47f136a9e2a057b2d06093b907fc3ddd
http://europepmc.org/articles/PMC6209730
http://europepmc.org/articles/PMC6209730
Autor:
Kwang Youl Kim, Hyojung Lee, Sang Ick Park, Moon Suk Nam, Han Byul Jang, Kyung-Tae Lee, Joo Sun Choi, Hyo-Jin Kim, Woojung Lee, Hyo-Jeong Ban, Hye-Ja Lee, Seong Beom Cho
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-12 (2018)
Scientific Reports
Scientific Reports
To unravel metabolic determinats of insulin resistance, we performed a targeted metabolomics analysis in Korean Children-Adolescent Cohort Study (KoCAS, n = 430). Sixty-seven metabolites were associated with insulin resistance in adolescents and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2199398652306b572dd190e197909e23
http://link.springer.com/article/10.1038/s41598-018-20549-0
http://link.springer.com/article/10.1038/s41598-018-20549-0
Autor:
Jin-Hong Park, Moonsuk Choi, Dae Jung Kim, Joo Sun Choi, Yongkook Park, Jung Woo Baek, Kyu-Pil Lee, Hyuck Chai Jung, Shin Deuk Kim, Segeun Park, Chang Hwan Choi, Il Gweon Kim, Suk Hun Lee, Dong-Ho Kang
Publikováno v:
Materials Research Bulletin. 82:22-25
In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge + C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3565d37ce893696a24647217d8b2785d
https://doi.org/10.1016/j.materresbull.2016.03.011
https://doi.org/10.1016/j.materresbull.2016.03.011
Autor:
Hyuck-Chai Jung, Dong-Ho Kang, Jin-Hong Park, Il Gweon Kim, Suk Hun Lee, Dae Jung Kim, Joo Sun Choi, Yongkook Park, Hyo-Jik Nam, Chang Hwan Choi, Woosuk Jung, Seong-Hoon Jeong, Segeun Park, Kyu-Pil Lee
Publikováno v:
Materials Research Bulletin. 82:31-34
In this paper, to suppress transient enhanced dopant diffusion and improve short channel effects, cold implantation (cold-IIP) was applied to contact PLUG implantation in P-channel metal oxide semiconductor field effect transistors (PMOSFETs). A shal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53605a742994af862e283a76d6f7f925
https://doi.org/10.1016/j.materresbull.2016.02.027
https://doi.org/10.1016/j.materresbull.2016.02.027
Publikováno v:
The Journal of Nutritional Biochemistry. 26:1414-1423
Excessive tissue iron levels are a risk factor for insulin resistance and type 2 diabetes, which are associated with alterations in iron metabolism. However, the mechanisms underlying this association are not well understood. This study used human li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0dea703580f751892562c9d5b7b9897
https://doi.org/10.1016/j.jnutbio.2015.07.008
https://doi.org/10.1016/j.jnutbio.2015.07.008
Autor:
Soo-Young Lee, Chan-Uk Jeon, Hwasuk Cho, Joo-Sun Choi, Byeong-jae Kim, Sookhyun Lee, Xinyu Zhao, Ilgyou Shin
Publikováno v:
Microelectronic Engineering. 133:78-87
Display Omitted Behaviors of LER caused by the stochastic exposure have been analyzed.LER decreases from the inside of a feature to the outside.LER is smaller for a higher beam energy, a higher dose, or a thinner resist.LER is smaller for a smaller e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ad32e7367adab94f256ca8bcf4325bb
https://doi.org/10.1016/j.mee.2014.11.017
https://doi.org/10.1016/j.mee.2014.11.017
Autor:
Hye-Ran Kim, Chul-Sung Park, Kwang-Il Park, Jin-Il Lee, Young-Chul Cho, Jun-Young Park, Chang-Yong Lee, Hyoung-Joo Kim, Ki-Won Lee, Joo Sun Choi, Seong-Jin Jang, Hoe-ju Chung, Jong-ho Lee, Tae-Young Oh, Yong-Cheol Bae, Seung-Hoon Oh, Young-Ryeol Choi, Su-Yeon Doo, Kyung-Soo Ha, Tae-Seong Jang
Publikováno v:
IEEE Journal of Solid-State Circuits. 50:178-190
A 1.0 V 8 Gbit LPDDR4 SDRAM with 3.2 Gbps/pin speed and integrated ECC engine for sub-1 V DRAM core is presented. DRAM internal read-modify-write operation for data masked write makes the integrated ECC engine possible in a commodity DRAM. Time inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b85aa5494f6f90794f6e13df897888c5
https://doi.org/10.1109/jssc.2014.2353799
https://doi.org/10.1109/jssc.2014.2353799
Autor:
Hyunyoon Cho, O Seongil, Kwang-Il Park, Young Hoon Son, Sanguhn Cha, Nam Sung Kim, Sang-joon Hwang, Joo Sun Choi, Jung Ho Ahn, Hyun-Sung Shin, Seong Jin Jang, Gyo Young Jin
Publikováno v:
HPCA
Technology scaling has continuously improved the density, performance, energy efficiency, and cost of DRAM-based main memory systems. Starting from sub-20nm processes, however, the industry began to pay considerably higher costs to screen and manage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77b5c4685f4c8a5b44da84e11a1a8f00
https://doi.org/10.1109/hpca.2017.30
https://doi.org/10.1109/hpca.2017.30
Autor:
Soo-Young Lee, Joo-Sun Choi, Hwasuk Cho, Byeong-jae Kim, Chan-Uk Jeon, Rui Guo, Q. Dai, Ilgyou Shin
Publikováno v:
Microelectronic Engineering. 127:86-96
A three-dimensional (3-D) remaining resist profile often needs to be estimated and examined especially for nanoscale feature. However, conventional methods, such as the cell removal method and fast marching method, require intensive computation, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee89b50f8cfd70bb74dacd03efd2d930
https://doi.org/10.1016/j.mee.2014.04.046
https://doi.org/10.1016/j.mee.2014.04.046
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 22:1441-1445
A CMOS charge pump adopting dual charge transfer switches and a transfer blocking technique is presented. Using these techniques, the proposed charge pump eliminates reversion loss and improves driving capability. A test chip is designed in a 46-nm C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ea8c563b026278806beed0fd3237343
https://doi.org/10.1109/tvlsi.2013.2267214
https://doi.org/10.1109/tvlsi.2013.2267214