Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Joo-Beom Lee"'
Autor:
Kyung-Mun Byun, Yong-Won Cha, Kim Min, Hyeon-deok Lee, In-Sun Park, Chang-Lyong Song, Sang-Hyeon Lee, Do-hyung Kim, Joo-Beom Lee
Publikováno v:
2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005..
We have attempted to reduce the plasma-induced damage to the thin gate oxides during intermetal dielectric (IMD) gap-fill process by high-density plasma (HDP) chemical vapor deposition (CVD). It was revealed that the optimization of preheating step c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76f052177946b8b542a2cf6d4a001172
https://doi.org/10.1109/icicdt.2005.1502601
https://doi.org/10.1109/icicdt.2005.1502601
