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Autor:
Tae Geun Kim, Jae Gun Park, Oh Hyun Kim, Seung Yoon Lee, Joo Kyoung Song, Jinho Ahn, Chul-Woong Yong
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23:2866
Controlling defects on the extreme ultraviolet lithography (EUVL) mask has become a critical issue among many EUVL element technologies. We have conducted experiments to investigate the correctability of two kinds of major defect types, phase and amp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48b34292b19b086b83ccf09f60ad1c0d
https://doi.org/10.1116/1.2134715
https://doi.org/10.1116/1.2134715
