Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Joo Hyon Noh"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 297-301 (2015)
Pulse thermal processing (PTP) has been explored for low thermal budget integration of indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The IGZO TFTs are exposed to a broadband (0.2-1.4 μm) arc lamp radiation spectrum with 100 pulses o
Externí odkaz:
https://doaj.org/article/dea259408b5b4b4398bb6c992b8ca514
Publikováno v:
Micromachines, Vol 6, Iss 2, Pp 172-185 (2015)
In this work, we demonstrate continuous and discrete functions in a digital microfluidic platform in a programmed manner. Digital microfluidics is gaining popularity in biological and biomedical applications due to its ability to manipulate discrete
Externí odkaz:
https://doaj.org/article/70ae0f7721d54c3f99aa03104919bb19
Autor:
Cheng Zhang, Kai Xiao, Olga S. Ovchinnikova, Anthony T. Wong, Liubin Xu, Thomas Z. Ward, Pushpa Raj Pudasaini, Anton V. Ievlev, Joo Hyon Noh, David Mandrus, Amanda Haglund, Haixuan Xu, Akinola D. Oyedele, Philip D. Rack
Publikováno v:
ACS Applied Materials & Interfaces. 10:22623-22631
The formation of an electric double layer in ionic liquid (IL) can electrostatically induce charge carriers and/or intercalate ions in and out of the lattice which can trigger a large change of the electronic, optical, and magnetic properties of mate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b91b7aeee4c0d9c6d108f987f1ff4016
https://doi.org/10.1021/acsami.8b05577
https://doi.org/10.1021/acsami.8b05577
Autor:
Peter Maksymovych, Olga S. Ovchinnikova, Anton V. Ievlev, Michael G. Stanford, Kyle Mahady, Philip D. Rack, Joo Hyon Noh
Publikováno v:
ACS Applied Materials & Interfaces. 9:35125-35132
Amorphous indium gallium zinc oxide (a-IGZO) is a transparent semiconductor which has demonstrated excellent electrical performance as thin-film transistors (TFTs). However, a high-temperature activation process is generally required which is incompa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7df3f3cbe437cc287e2bb865129d2eed
https://doi.org/10.1021/acsami.7b10449
https://doi.org/10.1021/acsami.7b10449
Autor:
Anthony T. Wong, Philip D. Rack, Amanda Haglund, Joo Hyon Noh, Pushpa Raj Pudasaini, David Mandrus, Thomas Z. Ward, Olga S. Ovchinnikova, Sheng Dai
Publikováno v:
Advanced Functional Materials. 26:2820-2825
Amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9ea458149dd966c8e3e4c3712309337
https://doi.org/10.1002/adfm.201505274
https://doi.org/10.1002/adfm.201505274
Publikováno v:
ACS Applied Materials & Interfaces. 7:19579-19588
Electron-beam-induced deposition patterns, with composition of PtC5, were purified using a pulsed laser-induced purification reaction to erode the amorphous carbon matrix and form pure platinum deposits. Enhanced mobility of residual H2O molecules vi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e05b358da43ac1cdcd64080e372a348c
https://doi.org/10.1021/acsami.5b02488
https://doi.org/10.1021/acsami.5b02488
Publikováno v:
Intermetallics. 59:32-42
The structural changes induced in a CoCrCuFeNi multicomponent nano-crystalline high-entropy alloy (HEA) under fast electron irradiation were investigated by in-situ transmission electron microscopy (TEM) using a high voltage electron microscope (HVEM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40cd3125cee8772ef97eb5ac8b3a0786
https://doi.org/10.1016/j.intermet.2014.12.007
https://doi.org/10.1016/j.intermet.2014.12.007
Autor:
Jason D. Fowlkes, Michael G. Stanford, Joo Hyon Noh, Rajendra Timilsina, Brett B. Lewis, Philip D. Rack
Publikováno v:
ACS Applied Materials & Interfaces. 7:4179-4184
In order to enhance the etch rate of electron-beam-induced etching, we introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e408a4a2d8380e07ad8855f1752b8051
https://doi.org/10.1021/am508443s
https://doi.org/10.1021/am508443s
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 297-301 (2015)
Pulse thermal processing (PTP) has been explored for low thermal budget integration of indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The IGZO TFTs are exposed to a broadband (0.2− $1.4~\mu $ m) arc lamp radiation spectrum with 100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7720bf95a231817b26e05b6ea20e2850
https://ieeexplore.ieee.org/document/6967717/
https://ieeexplore.ieee.org/document/6967717/
Autor:
Sheng Dai, Joo Hyon Noh, Pushpa Raj Pudasaini, David Mandrus, Anthony T. Wong, Amanda Haglund, Philip D. Rack, Thomas Z. Ward
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:Q105-Q109
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c221d358e34f03549b9db3eb77180238
https://doi.org/10.1149/2.0141509jss
https://doi.org/10.1149/2.0141509jss