Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jonny Tot"'
Publikováno v:
2018 41st International Spring Seminar on Electronics Technology (ISSE).
The active atomic nitrogen (N) species required for group III-N semiconductor material growth may be provided by a pure N2 gas ignited through a hollow cathode DC plasma system. An advantage of using nitrogen plasma over other common nitrogen-contain
Autor:
Jörg Pezoldt, Valentin Videkov, José Manuel, J.J. Jiménez, Rafael García, Heike Bartsch, M. Ramírez, Robert Dubreuil, Dimiter Alexandrov, Ana M. Beltrán, Svetozar Andreev, Eduardo Blanco, M. Fischer, Jonas Breiling, Jonny Tot, Antonio J. Santos, Bertrand Lacroix, Manuel Dominguez, Jens Muller, Boriana Tzaneva, Francisco M. Morales
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-14 (2018)
idUS. Depósito de Investigación de la Universidad de Sevilla
instname
Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-14 (2018)
idUS. Depósito de Investigación de la Universidad de Sevilla
This work presents results in the field of advanced substrate solutions in order to achieve high crystalline quality group-III nitrides based heterostructures for high frequency and power devices or for sensor applications. With that objective, Low T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35c215196e87848418ae1cde68577200
http://hdl.handle.net/10261/164913
http://hdl.handle.net/10261/164913
Autor:
Robert Dubreuil, Jonny Tot, Rafael García, Svetozar Andreev, M. Fischer, Dimiter Alexandrov, Francisco M. Morales, J.J. Jiménez, José Manuel, Bertrand Lacroix, Heike Bartsch, Valentin Videkov, Joerg Pezoldt, Jens Mueller, Boriana Tzaneva
Publikováno v:
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Technological results about low temperature epitaxial deposition of GaN layers on LTCC substrates are reported. Epitaxial growths of GaN layers have been performed on commercially available LTCC substrates at 540 °C. Pre-growth preparations of the L
Publikováno v:
2017 40th International Spring Seminar on Electronics Technology (ISSE).
Deposition of InAlN on commercially purchased SiC/(111) Si wafers has been performed in a temperature range of 530°C to 420°C using an alternating precursor MOCVD growth technique. The effect of an InN buffering layer between the substrate and the