Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jonny Hoglund"'
Autor:
Gyula Zsakai, Jonny Hoglund, Peter Horvath, Cristina Sanna, Robert J. Hillard, Dan McDonald, Patrick Taylor, Samuel Frey, Attila Marton
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:074006
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26f9b217f03d8de09818da01271973fd
https://doi.org/10.1149/2162-8777/ac164f
https://doi.org/10.1149/2162-8777/ac164f
Autor:
John Byrnes, Win Ye, G. Cueva, Wayne Mack Struble, Jonny Hoglund, Timothy E. Boles, Robert J. Hillard
Publikováno v:
2019 Compound Semiconductor Week (CSW).
The characterization of High Electron Mobility Transistor (HEMT) structures is important for predicting device behavior, monitoring and developing processes and improving performance. This also includes measuring the quality of the top dielectric cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae2b436c0ef08b7f4d68abe88758d556
https://doi.org/10.1109/iciprm.2019.8819245
https://doi.org/10.1109/iciprm.2019.8819245
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
Using model-based infrared reflectometry (MBIR) technique [1] we have developed a method for in-line process monitoring of polyimide passivation films to support the fabrication of fine pitch flip chip devices. A permanent passivation layer is incorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b764beca0824e9347b135535eac35a2a
https://doi.org/10.1109/asmc.2014.6846975
https://doi.org/10.1109/asmc.2014.6846975
Autor:
F. Pernot, F. Abbate, Matthew Wormington, Jonny Hoglund, D. Le Cunff, Nicolas Laurent, Romain Duru, T. Nguyen
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
This paper presents a study performed to evaluate the benefits of combining techniques to improve the overall metrology of thin Silicon Germanium (SiGe) epitaxial layers doped with Boron. A specifically-designed set of wafers was processed and measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ce0147041381614326b61f7397d72c9
https://doi.org/10.1109/asmc.2014.6846972
https://doi.org/10.1109/asmc.2014.6846972
Autor:
Romain Duru, Jonny Hoglund, Delphine Le-Cunff, T. Nguyen, Y. Campidelli, Nicolas Laurent, D. Barge
Publikováno v:
ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference.
This paper describes a study performed to evaluate in a manufacturing environment the Model Based Infrared Reflectometry (MBIR) technique for the monitoring of the Boron doping in epitaxial SiGe:B layers and Phosphorus doping in epitaxial SiC:P layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6608797c8276aa52330045ba13cd9e93
https://doi.org/10.1109/asmc.2013.6552811
https://doi.org/10.1109/asmc.2013.6552811
Publikováno v:
2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
This paper presents recent results obtained applying the Model Based Infrared Reflectometry (MBIR) technique as an in-line monitoring technique for high aspect ratio structures. The paper will focus on the description of the metrology development and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50b4a59854fef33ae6a040657f0f1d5f
https://doi.org/10.1109/asmc.2011.5898169
https://doi.org/10.1109/asmc.2011.5898169
Autor:
Matthew Wormington, Jonny Hoglund, Nicolas Laurent, Delphine Le Cunff, Thomas Nguyen, Romain Duru, Frederic Pernot, F. Abbate
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 13:041402
A study performed to evaluate the benefits of combining techniques to improve the overall metrology of thin silicon germanium (SiGe) epitaxial layers doped with boron is presented. A specifically designed set of wafers was processed and measured by d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bc675f4793861d90cd63abc6d207a41
https://doi.org/10.1117/1.jmm.13.4.041402
https://doi.org/10.1117/1.jmm.13.4.041402
Autor:
Zoltan J. Kiss, Szabolcs Velkei, Gyorgy Nadudvari, Jonny Hoglund, Richard A. Allen, Zsolt Kovacs, Chris Moore, Victor Vartanian
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 13:011208
The three-dimensional (3-D) integrated circuit relies on the stacking of multiple two-dimensional inte- grated circuits into a single deviceusing through silicon vias (TSVs) as the vertical interconnect. There are a number of factors driving 3-D inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd0a1a46bb6b30e7a227683ed575e1fd
https://doi.org/10.1117/1.jmm.13.1.011208
https://doi.org/10.1117/1.jmm.13.1.011208