Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jongyoon Yoon"'
Autor:
Jongyoon Yoon, Jong-Seon No
Publikováno v:
IEEE Access, Vol 8, Pp 26405-26418 (2020)
Topological interference management (TIM) can obtain degrees of freedom (DoF) gains with no channel state information at the transmitters (CSIT) except topological information of network in the interference channel. It was shown that TIM achieves sym
Externí odkaz:
https://doaj.org/article/b4a479705736466db51d9d2365bd9c88
Autor:
Thomas Zalocha, Ludmila Popova, Ho Young Song, Phillip Tatti, Chih-Chieh Huang, Krishan Gopal, Hongliang Shen, Jongyoon Yoon, Fauzia Khatkhatay, Amit Gupta
Publikováno v:
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
As feature sizes shrink in 14nm technology and beyond, focus window limited immersion lithography steps like those in the middle of line (MOL) are most susceptible to hotspots caused by small localized variations in wafer topography. Hotspots in MOL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38e5220a97e9cb0abe469d8b63202c4d
https://doi.org/10.1109/asmc.2018.8373181
https://doi.org/10.1109/asmc.2018.8373181
Autor:
Kyung-Won Lee, Jin-Kwan Choi, Young-Ho Yang, Leonard M. Rubin, Young-Ho Jeon, Sang Sun Lee, Ron Reece, Rympyo Hong, Jongyoon Yoon, Youngil Cheon, Chong-Il Ryu
Publikováno v:
AIP Conference Proceedings.
Reduction of polysilicon sheet resistivity and polysilicon depletion ratio (PDR) are two major challenges for improving the memory cell characteristics of sub-20 nm NAND Flash devices. High phosphorus doses are implanted into in situ doped polysilico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::221493880451eaf057c3cbaa89cb293b
https://doi.org/10.1063/1.4766483
https://doi.org/10.1063/1.4766483
Autor:
J. H. Kim, Jongyoon Yoon, S. Kondratenko, J. David, L. M. Rubin, I. S. Jang, J. C. Cha, Y. H. Joo, A. B. Lee, S. W. Jin, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki
Publikováno v:
AIP Conference Proceedings.
To meet the process requirements for well formation in future CMOS memory production, high energy implanters require more robust angle, dose, and energy control while maintaining high productivity. The Optima XEx high energy implanter meets these req
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abfb4c736bce1080ed839a8626deabd2
https://doi.org/10.1063/1.3548424
https://doi.org/10.1063/1.3548424
Autor:
Shu Satoh, Jongyoon Yoon, Jonathan David, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki
Publikováno v:
AIP Conference Proceedings.
Photoresist outgassing can significantly compromise accurate dosimetry of high energy implants. High energy implant even at a modest beam current produces high beam powers which create significantly worse outgassing than low and medium energy implant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31a79ee95f4cc28b86d88f34aaefc044
https://doi.org/10.1063/1.3548427
https://doi.org/10.1063/1.3548427