Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Jongwook Kye"'
Publikováno v:
IEEE Transactions on Electron Devices. 70:2941-2946
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::829777e1c7ab9c872a5bb3bf758a8562
https://doi.org/10.1109/ted.2023.3270398
https://doi.org/10.1109/ted.2023.3270398
Autor:
Jongwook Kye
Publikováno v:
DTCO and Computational Patterning.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26447e070c0bdc9b733b76cc3bd7de90
https://doi.org/10.1117/12.2623364
https://doi.org/10.1117/12.2623364
Autor:
Giyoung Yang, Hakchul Jung, Jinyoung Lim, Jaewoo Seo, Ingyum Kim, Jisu Yu, Hyeoungyu You, Jeongsoon Kong, Garoom Kim, Minjae Jeong, Chanhee Park, Sera An, Woojin Rim, Hayoung Kim, Dalhee Lee, Sanghoon Baek, Jonghoon Jung, Taejoong Song, Jongwook Kye
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e460156d6dafb0c583e36836bc569b58
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830450
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830450
Autor:
Hyunjin Shin, Sangkyung Won, Dohui Kim, Byunghun Choi, Gyusung Kim, Myeonghee Oh, Jaeseung Choi, Jongwook Kye
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46a0edb0c3ca9f181d17bb736c8cb6ec
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830151
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830151
Autor:
Woonggyu Lee, Seungjae Jung, Bonhyuck Koo, Jongwook Kye, Ahmed Saleh, Ahmed Gharieb, Mohamed Elrefaee, Mohamed Alimam
Publikováno v:
2022 IEEE 31st Microelectronics Design & Test Symposium (MDTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::419559a545df64a41fa9a9890b05d164
https://doi.org/10.1109/mdts54894.2022.9826947
https://doi.org/10.1109/mdts54894.2022.9826947
Publikováno v:
VLSI Circuits
A 28nm embedded Flash memory in this paper is designed for the Automotive application in Foundry. Through Temperature Auto-Tracking Sense Amplifier using the Bit line Charge Boost (BCB) and Bit line Leakage current Compensation (BLC) technology, it s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6d5e0156109a4a5389217960b0c529e
https://doi.org/10.23919/vlsicircuits52068.2021.9492384
https://doi.org/10.23919/vlsicircuits52068.2021.9492384
Autor:
Taejoong Song, Hoyoung Tang, Jae-Seung Choi, Baeck Sang-Yeop, Lee Inhak, Dong-Wook Seo, Jongwook Kye
Publikováno v:
VLSI Circuits
Voltage Auto Tracking Cell Power Lowering (VACPL) Write Assist circuit is proposed for low-power SRAM with dual-rail architecture. VACPL adaptively controls the cell voltage with respect to the dual rail offset voltage to maximize bitcell write-abili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b74978f8cbc6f928e335d5727098af33
https://doi.org/10.23919/vlsicircuits52068.2021.9492368
https://doi.org/10.23919/vlsicircuits52068.2021.9492368
Autor:
Jaehong Park, Taejung Lee, Woojin Rim, Geum-Jong Bae, Hoonki Kim, Taeyeong Kim, Jong-Hoon Jung, Dong-Won Kim, S. D. Kwon, Hakchul Jung, Hyung-Tae Kim, Taejoong Song, Soon-Moon Jung, Sanghoon Baek, Keun Hwi Cho, Jongwook Kye
Publikováno v:
ISSCC
Advanced technologies help to improve SRAM performance via recent transistor breakthroughs [1], which allow SRAM designers to focus on handling metal resistance by alleviating device performance impediments. Since SRAM margins are more vulnerable to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39061cc23ae105d92382e833936d1627
https://doi.org/10.1109/isscc42613.2021.9365988
https://doi.org/10.1109/isscc42613.2021.9365988
Autor:
Manuj Rathor, Suk-Soo Pyo, Steve Ngueya Wandji, Andrew Sowden, Jean Christophe Vial, Alexandra Gourio, Gwan-Hyeob Koh, El Mehdi Boujamaa, Jongwook Kye, Samsudeen Mohamed Ali, Yoon-Jong Song, Cyrille Dray, Taejoong Song
Publikováno v:
VLSI Circuits
In this paper we present a read circuitry that tackles all STT-MRAM read challenges. First, a negative temperature coefficient (NTC) reference based on an MTJ in series with an “NTC” resistor circuit emulator is described. Then, an offset cancell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a9e75e497fd088271bdab9049ae51aa
https://doi.org/10.1109/vlsicircuits18222.2020.9162803
https://doi.org/10.1109/vlsicircuits18222.2020.9162803
Autor:
Hyuck-Chai Jung, T.H. Choi, Hyun-Chul Kim, Jeong-Dong Choi, Seong-Ook Jung, Taejoong Song, H.W. Choi, Hyuck Choo, Jongwook Kye
Publikováno v:
2019 Symposium on VLSI Technology.
High-sigma yield simulation analysis based on accurate SPICE mismatch model is required for high volume product design. Especially for the low power design in sub-7nm technology, the non-Gaussian behavior of the transistor drain currents $(I_{\text{d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cd997a438e52449aeece7df5e6f7ee6
https://doi.org/10.23919/vlsit.2019.8776509
https://doi.org/10.23919/vlsit.2019.8776509