Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Jongtae, Ahn"'
Autor:
Seungho Song, Changsoon Choi, Jongtae Ahn, Je‐Jun Lee, Jisu Jang, Byoung‐Soo Yu, Jung Pyo Hong, Yong‐Sang Ryu, Yong‐Hoon Kim, Do Kyung Hwang
Publikováno v:
InfoMat, Vol 6, Iss 2, Pp n/a-n/a (2024)
Abstract To overcome the intrinsic inefficiency of the von Neumann architecture, neuromorphic devices that perform analog vector–matrix multiplication have been highlighted for achieving power‐ and time‐efficient data processing. In particular,
Externí odkaz:
https://doaj.org/article/c2b9cfc26597451d8e81f5573efae70f
Autor:
Hanna Lee, Jun Ho Hwang, Seung Ho Song, Hyemi Han, Seo‐Jung Han, Bong Lim Suh, Kahyun Hur, Jihoon Kyhm, Jongtae Ahn, Jeong Ho Cho, Do Kyung Hwang, Eunji Lee, Changsoon Choi, Jung Ah Lim
Publikováno v:
Advanced Science, Vol 10, Iss 27, Pp n/a-n/a (2023)
Abstract High‐performance chiroptical synaptic phototransistors are successfully demonstrated using heterojunctions composed of a self‐assembled nanohelix of a π‐conjugated molecule and a metal oxide semiconductor. To impart strong chiroptical
Externí odkaz:
https://doaj.org/article/01f76642d8c04fd7ac6e0427dea5149c
Autor:
Joo-Hyun Kim, Hyemi Han, Min Kyu Kim, Jongtae Ahn, Do Kyung Hwang, Tae Joo Shin, Byoung Koun Min, Jung Ah Lim
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract Although solution-processed Cu(In,Ga)(S,Se)2 (CIGS) absorber layers can potentially enable the low-cost and large-area production of highly stable electronic devices, they have rarely been applied in photodetector applications. In this work,
Externí odkaz:
https://doaj.org/article/4eb48d231fad4ad0b718aa5d963f6794
Publikováno v:
Results in Physics, Vol 21, Iss , Pp 103854- (2021)
A simple method for obtaining the charge carrier density of two-dimensional (2D) materials is proposed herein. A formula is suggested for the extraction of the 2D charge carrier density using the horizontal depletion width, which is visually represen
Externí odkaz:
https://doaj.org/article/a84edc46b25143e0916c879b1ab333dd
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-7 (2018)
Abstract There is a great interest in phototransistors based on transition metal dichalcogenides because of their interesting optoelectronic properties. However, most emphasis has been put on MoS2 and little attention has been given to MoSe2, which h
Externí odkaz:
https://doaj.org/article/31f499517dc245e8b000790f87c759f0
Autor:
Sehwan Chang, Junyoung Jin, Jihoon Kyhm, Tae Hwan Park, Jongtae Ahn, Sung-Yul L. Park, Suk In Park, Do Kyung Hwang, Sang Soo Choi, Tae-Yeon Seong, Jin-Dong Song, Gyu Weon Hwang
Publikováno v:
Optics express. 30(12)
We fabricated a 1 × 10 PbS QD photodiode array with multiple stacked QD layers with high-resolution patterning using a customized photolithographic process. The array showed the average responsivity of 5.54 × 10−3 A/W and 1.20 × 10−2 A/W at 0
Autor:
Jongtae Ahn, Jihoon Kyhm, Hee Kyoung Kang, Do Kyung Hwang, Hong Kyu Kim, Soohyung Park, Namhee Kwon
Publikováno v:
ACS Photonics. 8:2650-2658
Autor:
Sergey G. Menabde, Sergejs Boroviks, Jongtae Ahn, Jacob T. Heiden, Kenji Watanabe, Takashi Taniguchi, Tony Low, Do Kyung Hwang, N. Asger Mortensen, Min Seok Jang
Publikováno v:
Science Advances. 8
Near-field mapping has been widely used to study hyperbolic phonon-polaritons in van der Waals crystals. However, an accurate measurement of the polaritonic loss remains challenging because of the inherent complexity of the near-field signal and the
Autor:
Do Kyung Hwang, Young Tack Lee, Jisu Jang, Jongtae Ahn, Jae Won Shim, Tae Wook Kim, Takashi Taniguchi, Kenji Watanabe, Hyun-Soo Ra
Publikováno v:
ACS Applied Materials & Interfaces. 13:7470-7475
Two-dimensional transition metal dichalcogenide semiconductors are very promising candidates for future electronic applications with low power consumption due to a low leakage current and high on-off current ratio. In this study, we suggest a complem
Autor:
Jisu, Jang, Hyun-Soo, Ra, Jongtae, Ahn, Tae Wook, Kim, Seung Ho, Song, Soohyung, Park, Takashi, Taniguch, Kenji, Watanabe, Kimoon, Lee, Do Kyung, Hwang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(19)
Precise control over the polarity of transistors is a key necessity for the construction of complementary metal-oxide-semiconductor circuits. However, the polarity control of 2D transistors remains a challenge because of the lack of a high-work-funct