Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Jongsun Maeng"'
Publikováno v:
Thin Solid Films. 518:865-869
We synthesized ZnO nanowall networks on GaN/sapphire substrates by metal organic chemical vapor deposition without using metal catalysts. It was observed that the domain size of ZnO nanowalls decreased and the density of nanowall networks increased w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56659e3ce60585f97433a5528ebb89da
https://doi.org/10.1016/j.tsf.2009.07.105
https://doi.org/10.1016/j.tsf.2009.07.105
Publikováno v:
Materials Research Bulletin. 43:1649-1656
The structural and electrical properties of VO 2 nanowires synthesized on Si 3 N 4 /Si substrates or molybdenum grids by a catalyst-free vapour transport method were investigated. The grown VO 2 nanowires are single crystalline and rectangular-shaped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b9ed2ce6aa5d02c30427389306445e2
https://doi.org/10.1016/j.materresbull.2007.09.013
https://doi.org/10.1016/j.materresbull.2007.09.013
Autor:
Gunuk Wang, Soonshin Kwon, Ahnsook Yoon, Gunho Jo, Tae-Wook Kim, Sunghoon Song, Takhee Lee, Jongsun Maeng, Woong-Ki Hong
Publikováno v:
Colloids and Surfaces A: Physicochemical and Engineering Aspects. :308-311
We synthesized high-quality single-crystalline indium oxide nanowires using gold catalytic vapor–liquid–solid growth and characterized their electrical properties with field effect transistor structures. The grown indium oxide nanowires are non-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::355f71832eff221e52f2402ece88b81f
https://doi.org/10.1016/j.colsurfa.2007.04.166
https://doi.org/10.1016/j.colsurfa.2007.04.166
Publikováno v:
Handbook of Nanophysics ISBN: 9780429193187
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80084ef58c9cbe63887307bbc43826c6
https://doi.org/10.1201/9781420075519-17
https://doi.org/10.1201/9781420075519-17
Autor:
Gunho Jo, Minhyeok Choe, Jongsun Maeng, Woong-Ki Hong, Woojin Park, Takhee Lee, Gunuk Wang, Yung Ho Kahng
Publikováno v:
Nanotechnology. 20(47)
We report on the adjustment of the operation voltage in ZnO nanowire field effect transistors (FETs) by a simple solvent treatment. We have observed that by submerging ZnO nanowires in isopropyl alcohol (IPA), the surface of the ZnO nanowires is etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::117ae9b289e8d5d001fd8e6d8f0ff5af
https://pubmed.ncbi.nlm.nih.gov/19858553
https://pubmed.ncbi.nlm.nih.gov/19858553
Autor:
Hor-Gil Hur, James K. Fredrickson, Alice Dohnalkova, Bongyoung Yoo, Nosang V. Myung, Takhee Lee, Jongsun Maeng, Min Gyu Kim, Ji-Hoon Lee, Michael J. Sadowsky
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America. 104(51)
Microorganisms facilitate the formation of a wide range of minerals that have unique physical and chemical properties as well as morphologies that are not produced by abiotic processes. Here, we report the production of an extensive extracellular net
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21cfa9086ab1f3b3c0b32fa36740d0e2
https://pubmed.ncbi.nlm.nih.gov/18077394
https://pubmed.ncbi.nlm.nih.gov/18077394
Autor:
Jongsun Maeng, Woong-Ki Hong, Ahnsook Yoon, Tae-Wook Kim, Gunuk Wang, Hyunwook Song, Takhee Lee, Gunho Jo
Publikováno v:
Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a5d0e38a72f8c56d6c36a9624068c40
https://doi.org/10.7567/ssdm.2007.h-2-1
https://doi.org/10.7567/ssdm.2007.h-2-1
Autor:
Yong-Il Kim, Joosung Kim, Young-jo Tak, Jun-Youn Kim, Joong Jung Kim, Hyun Kum, Youngsoo Park, Dong-gun Lee, Mi Hyun Kim, Jongsun Maeng, Gilho Gu
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33:060602
The reverse bias leakage characteristics of InGaN/GaN light emitting diodes (LEDs) grown on Si (111) were investigated as a function of two factors: (1) bulk depletion width and (2) V-pit size. The reverse leakage current showed a decreasing trend wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42871b584c31141729d77a5e830aba03
https://doi.org/10.1116/1.4933039
https://doi.org/10.1116/1.4933039
Publikováno v:
2006 IEEE Nanotechnology Materials and Devices Conference.
High-quality single-crystal indium oxide (In 2 O 3 ) nanowires (NWs) are synthesized using gold catalytic vapor-liquid-solid growth. The synthesized In 2 O 3 NWs are nonstoichiometric due to oxygen vacancies from X-ray photoelectron spectroscopic stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::243a2e3263c9769c37074ba4f2f9be94
https://doi.org/10.1109/nmdc.2006.4388833
https://doi.org/10.1109/nmdc.2006.4388833
Publikováno v:
2006 IEEE Nanotechnology Materials and Devices Conference.
The VO 2 nanowires were grown on Si 3 N 4 /Si substrate by a vapor transport method. Single crystalline rectangular structure of VO 2 nanowires is verified by scanning electron microscopy and transmission electron microscopy. Individual VO 2 nanowire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9143071228aca8ec5c4e0250cce42273
https://doi.org/10.1109/nmdc.2006.4388824
https://doi.org/10.1109/nmdc.2006.4388824