Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Jonghee Suh"'
Publikováno v:
Journal of the Korean Physical Society. 72:780-785
In CdS/CdTe solar cells, Cu is added during the formation of the metallic electrode to enhance the contact properties and achieve an appropriate hole concentration in the cadmium telluride (CdTe) layer. In this study, we added Cu to CdS/CdTe solar ce
Autor:
Ralph B. James, Jonghee Suh, Aleksey E. Bolotnikov, Yongsu Yoon, Hyun Yong Yu, Sung Do Hwang, Kihyun Kim, J. Hong
Publikováno v:
IEEE Transactions on Nuclear Science. 64:2966-2969
The electrical properties of CdZnTe(CZT) above the melting point of tellurium (Te) inclusions were determined during in situ annealing. The thermal annealing cycles of the CZT detectors were 490 °C, 530 °C, and 570 °C continuously, which were high
Publikováno v:
Optics express. 27(15)
Metal nanoparticles (NPs) are incorporated in solar cells during the formation of front or back contacts to improve light absorption via the scattering of excitation light at their surface plasmon resonance (SPR) or localized SPR (LSPR). Here, we dem
Autor:
Kihyun Kim, Anwar Hossain, Aleksey E. Bolotnikov, Ralph B. James, Jonghee Suh, Jinki Hong, Jan Franc
Publikováno v:
IEEE Transactions on Nuclear Science. 63:2657-2661
Defects located at the $\text {E}\rm _{C}$ - 1.1 (eV) level, which are electro-optically active deep traps, generally have been overlooked since their presence cannot be detected except for those in highly resistive CdTe compounds. The origin of this
Autor:
Aleksey E. Bolotnikov, Jinki Hong, Ralph B. James, Giuseppe S. Camarda, Ge Yang, Kihyun Kim, Yonggang Cui, Anwar Hossain, Jonghee Suh, O. Kopach, P. M. Fochuk
Publikováno v:
Journal of Crystal Growth. 354:62-66
The performance of CdZnTe (CZT) detectors is limited not only by conventional carrier-trapping to point defects but also by trapping at macroscopic Te secondary-phase defects, such as Te inclusions and Te precipitates. The aim of this research is to
Publikováno v:
IEEE Transactions on Nuclear Science. 56:858-862
Semi-insulating Cd0.9Mn0.1Te:In crystals are grown by vertical Bridgman method. The segregation coefficient of Mn in CdTe is nearly 1 so that all the CdMnTe samples obtained from one ingot have nearly a same Mn composition. Also sulfur-based passivat
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 586:211-214
High purity Pb-doped CdZnTe single crystals were grown by using the vertical Bridgman method. Their electrical properties and X-ray spectrum were investigated. The doping concentration of Pb was about 1 × 10 19 cm - 3 . The resistivity of Pb-doped C
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 633:S69-S71
Oxygen partial pressure in a growth process of lead oxide determines chemical and physical properties as well as crystalline structure. In order to supply oxygen, two ring-shape suppliers have been installed in a growth chamber. Films have been depos
Publikováno v:
2006 IEEE Nuclear Science Symposium Conference Record.
High purity Pb-doped CdZnTe single crystals were grown by the vertical Bridgman method and their electrical properties and X-ray sensitivity were investigated. The doping concentration of Pb was about 1 times 1019 cm-3. The resistivity of Pb-doped Cd
Publikováno v:
2006 IEEE Nuclear Science Symposium Conference Record.
Semi-insulating n-type polycrystalline CdZnTe thick films are deposited by thermal evaporation method. The solubility of Cl in CdZnTe limits high doping concentration that establish full compensation. To make the most use of merit of Cl, heavy metals