Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Jonggook Kim"'
Publikováno v:
IEEE Transactions on Electron Devices. 63:2987-2993
A physics-based silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) aging model for mixed-mode stress based on the lucky-electron model and reaction-diffusion theory is developed for integration with compact models. An effective aging pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::439ba07f3d080a8b36debaa3b8303558
https://doi.org/10.1109/ted.2016.2573263
https://doi.org/10.1109/ted.2016.2573263
Autor:
Jonggook Kim
Publikováno v:
Natur und Freiheit ISBN: 9783110467888
Natur und Freiheit
Natur und Freiheit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d4eef715e44005f1321e588029ed41b
https://doi.org/10.1515/9783110467888-384
https://doi.org/10.1515/9783110467888-384
Autor:
Jeff A. Babcock, Alan Buchholz, Robert Malone, Mattias Dahlstrom, Marco Corsi, Alexei Sadovnikov, Hiroshi Yasuda, Joel M. Halbert, Jonggook Kim, Greg Cestra
Publikováno v:
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
The evolution of silicon and silicon-germanium pnp transistors is reviewed in this paper. The motivation for SiGe-pnp transistors in Complementary Bipolar (CBi) and CBiCMOS is discussed with a view on device parametric parameters that help gage the u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37fd88d32864524f0ead08fa58a53fa5
https://doi.org/10.1109/bctm.2016.7738946
https://doi.org/10.1109/bctm.2016.7738946
Publikováno v:
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM.
An empirical reliability model is proposed here that is able to predict parameter degradation for a SiGe Hetero-junction Bipolar Transistor (HBT) by scaling stress time laterally producing a universal curve that describes whole time evolution of degr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a4db845def32252a35a35204060b3e0
https://doi.org/10.1109/bctm.2015.7340567
https://doi.org/10.1109/bctm.2015.7340567
Publikováno v:
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Contact Electromigration (EM) constraining the performance for a SiGe hetero-junction bipolar transistor (HBT) is investigated. By incorporating a stacked contact structure with Via, the time-to-fail (TTF) increases by ten-fold and contact EM current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5da31e8d1fde5fd575f68a2d20772b04
https://doi.org/10.1109/bctm.2013.6798169
https://doi.org/10.1109/bctm.2013.6798169
Considerations for forward active mode reliability in an advanced hetero-junction bipolar transistor
Publikováno v:
2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
The implementation of safe operating area (SOA) is discussed in this paper to quantify electrical, thermal, and Hot Carrier (HC) limits for a SiGe hetero-junction bipolar transistor (HBT) in a forward active mode. An electrical limit should be constr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed4aa24d83726359cc0abdaf6e6bb594
https://doi.org/10.1109/bctm.2012.6352659
https://doi.org/10.1109/bctm.2012.6352659
Publikováno v:
2010 IEEE International Integrated Reliability Workshop Final Report.
The equation of resistance drift governing oxidation is derived in this paper for Copper-Top (Cu-Top) interconnects to assess reliability of Cu-Top. Our equation is not only demonstrated by thermal storage tests at various temperatures but also chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f97d91b35ce9487c15819114319f1298
https://doi.org/10.1109/iirw.2010.5706483
https://doi.org/10.1109/iirw.2010.5706483
Autor:
Sachin Seth, Alan Buchholz, Jeff A. Babcock, Tushar Thrivikraman, Marco Bellini, John D. Cressler, Tianbing Chen, Peng Cheng, C.M. Grens, Jonggook Kim
Publikováno v:
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
The RF safe-operating-area of a variety of both bulk and thick-film SOI SiGe HBTs SiGe has been investigated using DC and pulsed-mode output characteristics, as well as RF gain and linearity measurements. SOI SiGe HBTs are found to suffer more from s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b12a4841b7f73064a601a13776152cd6
https://doi.org/10.1109/bipol.2009.5314144
https://doi.org/10.1109/bipol.2009.5314144
Autor:
Alan Buchholz, C.M. Grens, Yun Liu, Sachin Seth, Peng Cheng, John D. Cressler, Jonggook Kim, Jeff A. Babcock
Publikováno v:
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
The RF linearity characteristics of complementary (npn + pnp) SiGe HBTs are investigated with respect to bias and frequency dependence, for the first time. The differences in distortion performance between npn and pnp SiGe HBTs are examined. Overall,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8e42c8ed526613214d2e1beb1a5b5a5
https://doi.org/10.1109/bipol.2009.5314146
https://doi.org/10.1109/bipol.2009.5314146
Autor:
Natasha Lavrovskaya, W. Greig, Yen Nguyen, Scott Ruby, T. Krakowski, Jeff A. Babcock, Todd Thibeault, Tianbing Chen, Steven J. Adler, Alexei Sadovnikov, Jonggook Kim
Publikováno v:
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
Footprint design in SiGe BiCMOS SOI technology is described in this paper to improve device performance matrix. The safe operating area (SOA) for a SiGe hetero-junction bipolar transistor (HBT) fabricated on silicon on insulator (SOI) is significantl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd28e18bedee4db388bd3584a00c0653
https://doi.org/10.1109/bipol.2008.4662745
https://doi.org/10.1109/bipol.2008.4662745