Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jongdae Kim Kim"'
Autor:
D-W Lee Lee, J-G Koo Koo, Jongdae Kim Kim, S-G Kim Kim, K-I Cho Cho, Yi Kang Kang, I-Y Park Park, Tae Moon Roh Roh, Yil Suk Yang
Publikováno v:
ETRI Journal. 24:333-340
We propose a new process technique for fabricating very high-density trench MOSFETs using 3 mask layers with oxide spacers and a self-aligned technique. This technique reduces the device size in trench width, source, and p-body region with a resultin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae268fd8f2492c4861d8b5b700ac0662
https://doi.org/10.4218/etrij.02.0102.0501
https://doi.org/10.4218/etrij.02.0102.0501
Publikováno v:
ETRI Journal. 24:328-331
¾ We investigated the electrical characteristics of p-channel double -diffused MOSFETs (p -LDMOSFETs) with an uneven racetrack source (URS) anda conventional racetrack source (CRS) for PDP driver IC applications. The breakdown voltage of the p-LDMOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8362c462cd8569be192f4a99f1a546ab
https://doi.org/10.4218/etrij.02.0202.0402
https://doi.org/10.4218/etrij.02.0202.0402
Autor:
Sang-Gi Kim, Hoon Soo Park Park, Dae Yong Kim Kim, Jongdae Kim Kim, Tae Moon Roh Roh, Jin-Gun Koo Koo
Publikováno v:
ETRI Journal. 21:22-28
A new tapered TEOS oxide technique has been developed to use field oxide of the power integrated circuits. It provides better uniformity of less than 3 % and reproducibility. On-resistance of P-channel RESURF (REduced SURface Field) LDMOS transistors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a72f622641a5e53a19a7f001c71feaae
https://doi.org/10.4218/etrij.99.0199.0304
https://doi.org/10.4218/etrij.99.0199.0304
Publikováno v:
Value in Health. 19:A765
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e72f9c5c4697e5895c4026e320d2c32
https://doi.org/10.1016/j.jval.2016.09.2391
https://doi.org/10.1016/j.jval.2016.09.2391
Autor:
Yil Suk Yang, Jongdae Kim Kim, Tae Moon Roh Roh, Dae Woo Lee Lee, JG Koo Koo, S-G Kim Kim, IY Park Park, BG Yu Yu
Publikováno v:
ETRI Journal. 24:462-464
This paper presents a serial interface circuit that permits selection of the amount of data converted from serial-to-parallel and parallel-to-serial and overcomes the disadvantages of the conventional serial input/output interface. Based on the selec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::759fbe13dba686084903d95e7a6bd690
https://doi.org/10.4218/etrij.02.0202.0001
https://doi.org/10.4218/etrij.02.0202.0001