Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jong-yong Bae"'
Autor:
Cheng Xu, Wenqi Zhang, Chongshen Song, Zhongcai Niu, Ui-Hyoung Lee, Jaihyung Won, Jong-yong Bae, Xiangmeng Jing
Publikováno v:
ECS Transactions. 66:183-191
Stacking of ICs using three-dimensional (3D) integration technology helps in significantly reducing wiring lengths, interconnection latency, and power dissipation while enhancing performance. Through silicon vias (TSVs) are regarded as a key enabling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85fadbce428c5418d635ff5be30916f0
https://doi.org/10.1149/06604.0183ecst
https://doi.org/10.1149/06604.0183ecst
Autor:
Suncheul Kim, Jong-yong Bae, Miseok Park, Yong Il Kwon, Dong-Hoon Han, Ui-Hyoung Lee, Yoonbon Koo
Publikováno v:
ECS Meeting Abstracts. :1179-1179
Recent developments in CMOS (Complementary Metal-Oxide-Semiconductor) technology have heightened the need for high-quality interface between mold and metal line, in order to decrease the RC delay in CMOS circuit. This technical trend indicates that t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b65116c5dea44421d221a8e7a23d6a03
https://doi.org/10.1149/ma2019-01/23/1179
https://doi.org/10.1149/ma2019-01/23/1179
Publikováno v:
Thin Solid Films. 547:216-221
For the purpose of enhancement of productivity by reducing opportunity of preventive maintenance, it is very important to form a tungsten and tungsten-nitride pasting layer onto the chamber wall inside a tungsten sputter deposition system. In this st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d329c6ddd1f713e04f5a15fe5197470
https://doi.org/10.1016/j.tsf.2013.03.037
https://doi.org/10.1016/j.tsf.2013.03.037
Publikováno v:
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits.
Cu pumping is a potential reliability issue for through silicon via (TSV) based 2.5D and 3D integration, due to the CTE mismatch between silicon and copper. In this paper, we report the reliability assessment of Cu pumping treated at different anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad583bd783affc56814b542d09de6446
https://doi.org/10.1109/ipfa.2015.7224329
https://doi.org/10.1109/ipfa.2015.7224329
Autor:
Ui-Hyoung Lee, Hyo-Jong Lee, Sang-Hyuk Kim, Chae-Min Park, Han Kyun Shin, Jong-yong Bae, Jaihyung Won
Publikováno v:
ECS Meeting Abstracts. :1711-1711
Anisotropic behavior of Sn based solder during electromigration has been studied by many researchers, and it is very important to control the microstructure for more reliable bump joints[1]. Here, we prepared various SnAg bumps with different Ag conc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3777de730ce65acb85a9cb495204c2c9
https://doi.org/10.1149/ma2014-02/33/1711
https://doi.org/10.1149/ma2014-02/33/1711