Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jong-heun Lim"'
Autor:
Katherine Sieg, Christopher R. Carr, Karsten Schaefer, M. F. Chen, Christopher L. Borst, David Skilbred, Jong-heun Lim, Kosta Culafi, Milo Tallon, Norman Fish, Frank Robertson, Chulgi Song, John Hagwood, Anne-Sophie Larrea, Angelo Alaestante, Mark Kelling, ChungJu Yang, Denis Sullivan, WenLi Collision, Nithin Yathapu, Hsi-Wen Liu, Yii-Cheng Lin, Cheng-Chung Chien, Erin Fria, Regina Swaine, Gerard Stapf, Dan Franca, BumKi Moon, K. K. W. Lee, Bruce Gall, Jamie Prudhomme, Yu-Lieh Fu, Alexander Bialy, Stock Chang, Shannon Dunn, Michael Bryant, Lin Pinyen, Huey-Ming Wang, Joe Maniscalco, Richard Conti, Rand Cottle, Barry Wang, Steven Smith, Sun-OO Kim
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
At 450mm wafer area, the first Cu BEOL module process was demonstrated with a single damascene structure using low-k ILD, TiN metal hard mask and guided 20nm half-pitched lamella BCP DSA patterning. It showed the potential opportunities, technical fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16f5a6641fe5a8a4871bd779ed63e8be
https://doi.org/10.1109/iitc-amc.2016.7507638
https://doi.org/10.1109/iitc-amc.2016.7507638
Autor:
Stock Chang, Shannon Dunn, Wenli Collison, Daniel Franca, Jong-heun Lim, Christopher L. Borst, Anne-Sophie Larrea, Janghee Lee
Publikováno v:
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
One of the options to reduce the cost related to the next generation of devices in the semiconductor industry is the scale up of the wafer size from 300mm to 450mm. The 450mm transition requires the development and qualification of new tools and proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::120ba07235607721383bb9628b025995
https://doi.org/10.1109/asmc.2016.7491134
https://doi.org/10.1109/asmc.2016.7491134
Publikováno v:
Journal of Materials Science: Materials in Electronics. 16:629-632
New semi-abrasive free slurry for copper chemical mechanical planarization (CMP) was investigated through the addition of below 0.5 wt% acid colloidal silica, hydrogen peroxide and other additives. The additives as stabilizers for hydrogen peroxide a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f43345d5bfa57f03a28bbf05926cd593
https://doi.org/10.1007/s10854-005-3241-0
https://doi.org/10.1007/s10854-005-3241-0
Publikováno v:
Materials Science and Engineering: B. 118:306-309
Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. It is generally known that the implementation of optimum slurry composition is one of the important is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c70d2514920d5fa948d60fc1eaffd3d
https://doi.org/10.1016/j.mseb.2004.12.059
https://doi.org/10.1016/j.mseb.2004.12.059
Publikováno v:
Materials Letters. 57:4601-4604
The effects of phosphoric acid addition on slurry for chemical–mechanical planarization (CMP) of copper and tantalum nitride were investigated. It is generally known that the slurry for copper CMP consists of alumina or colloidal silica as an abras
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::839fdd336951731579254f915496098f
https://doi.org/10.1016/s0167-577x(03)00368-9
https://doi.org/10.1016/s0167-577x(03)00368-9
Publikováno v:
Transactions on Electrical and Electronic Materials. 4:1-4
The purpose of this study was to investigate the characteristics of slurry including phosphoric acid for chemical-mechanical planarization of copper and tantalum nitride. In general, the slurry for copper CMP consists of alumina or colloidal silica a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2fc49f54ac8a0c88646f393e6fd2be2
https://doi.org/10.4313/teem.2003.4.2.001
https://doi.org/10.4313/teem.2003.4.2.001
Autor:
Jong heun Lim, Jung Eun Lee, Ki-Tae Koo, In-Chul Rhyu, Jungwon Lee, Sungtae Kim, Yang-Jo Seol, Yong-Moo Lee, Young Ku
Publikováno v:
Journal of Periodontal & Implant Science
Purpose: The aim of this study was to evaluate the effectiveness of powered toothbrushes for plaque control in patients with peri-implant mucositis, in comparison with manual toothbrushes. Methods: This randomized, prospective, controlled, clinical p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::550d8f37dfd1ab147fb09d9d3276ff89
https://doi.org/10.5051/jpis.2015.45.2.56
https://doi.org/10.5051/jpis.2015.45.2.56
Publikováno v:
ECS Meeting Abstracts. :1477-1477
This paper deals with chemical mechanical planarization (CMP) technology to develop 3D (3-Dimentional) stacked Flash Memory. The purpose of IGD CMP in full wafer process is to recover local planarity and surface roughness. Based on small elastic defl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08414f51580e8f5ebe9e77a42ba747c5
https://doi.org/10.1149/ma2010-02/21/1477
https://doi.org/10.1149/ma2010-02/21/1477
Publikováno v:
Journal of The Electrochemical Society. 151:C455
This paper demonstrates that micropatterns of copper films can be fabricated by selective electrochemical etching of copper using microcontact printing of self-assembled monolayers (SAMs). The elastomeric stamps which have microstructures on their su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d18ac7520e4756cd19ea23db414c1ef8
https://doi.org/10.1149/1.1753585
https://doi.org/10.1149/1.1753585
Publikováno v:
Electronics Letters. 39:718
Phosphoric acid (H/sub 3/PO/sub 4/) was evaluated as an accelerator of the tantalum nitride chemical-mechanical planarisation (CMP) process as well as a stabiliser of the hydrogen peroxide (H/sub 2/O/sub 2/). Also estimated were the dispersion stabil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d877a21dc0a9b2cad9ad948984f85776
https://doi.org/10.1049/el:20030491
https://doi.org/10.1049/el:20030491