Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jong-Won Back"'
Publikováno v:
IEEE Transactions on Electron Devices. 69:6717-6721
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b67dc8c97729f2417bf7ef20a3298297
https://doi.org/10.1109/ted.2022.3216537
https://doi.org/10.1109/ted.2022.3216537
Autor:
Sung-Ho Park, Dongseok Kwon, Ho-Nam Yoo, Jong-Won Back, Joon Hwang, Yeongheon Yang, Jae-Joon Kim, Jong-Ho Lee
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3046460cbbaef0fbda123cb5d6837991
https://doi.org/10.1109/iedm45625.2022.10019529
https://doi.org/10.1109/iedm45625.2022.10019529
Autor:
Jong-Ho Lee, Eunmee Kwon, Bongsik Choi, Byung-Gook Park, Jong-Ho Bae, S.-C. Chung, Honam Yoo, Ho-Jung Kang, Jong-Won Back
Publikováno v:
IEEE Electron Device Letters. 42:1148-1151
Retention characteristics of 3D NAND Flash cells are investigated at various temperatures ( ${T}$ ) depending on the degree of program and erase. The $\Delta {V}_{\text {th}}$ for each condition is compared to understand the degradation of the retent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d6851a4c8935564983d0543e23f29c5
https://doi.org/10.1109/led.2021.3088851
https://doi.org/10.1109/led.2021.3088851
Autor:
Jong-Ho Lee, Jong-Won Back, Min-Kyu Park, Jong-Ho Bae, Byung-Gook Park, Sung Yun Woo, Honam Yoo
Publikováno v:
IEEE Transactions on Electron Devices. 68:1627-1632
Dynamic random-access memory (DRAM) peripheral nMOSFETs with various channel length and channel doping concentration are analyzed at liquid nitrogen temperature (LNT). Important device parameters in circuit designs such as subthreshold mismatch, subt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a662b3bade7f1821e8291f6fe4351baa
https://doi.org/10.1109/ted.2021.3061516
https://doi.org/10.1109/ted.2021.3061516
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09026eb2841f2c2a660d67af74e87a15
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830445
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830445
Publikováno v:
Asia-pacific Journal of Multimedia services convergent with Art, Humanities, and Sociology. 7:897-906
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::912d709dbde2824017a4c9264e50bb80
https://doi.org/10.14257/ajmahs.2017.04.72
https://doi.org/10.14257/ajmahs.2017.04.72