Zobrazeno 1 - 10
of 211
pro vyhledávání: '"Jong-Hyeob Baek"'
Autor:
Yung Ryel Ryu, Sung Ki Hong, E. Fred Schubert, Dong-Min Jeon, Dong-Soo Shin, Jong-In Shim, Sang-Mook Kim, Jong Hyeob Baek
Publikováno v:
AIP Advances, Vol 14, Iss 4, Pp 045215-045215-6 (2024)
We have developed a light-emitting device, called the ZOGAN light-emitting diode (LED). The ZOGAN LED is formed with the p-layer composed of both ZnO-based oxide and GaN-based nitride semiconductors. The ZOGAN LED shows the characteristics of light-e
Externí odkaz:
https://doaj.org/article/84b28cd810cc4b43af2f4a2f1b2c69e3
Autor:
So Young Kim, June Park, Seon Hoon Kim, Linganna Kadathala, Jong Hyeob Baek, Jin Hyeok Kim, Ju Hyeon Choi
Publikováno v:
Applied Sciences, Vol 10, Iss 1, p 353 (2020)
PbO-SiO2-Al2O3-B2O3 (PSAB)-based glasses were prepared in order to determine the feasibility for laser sealing in the form of fiber. To reach a high quality of laser sealing, the tuning capability of CuO and Na2CO3 dopant concentration was examined o
Externí odkaz:
https://doaj.org/article/4569a2eec4244e1ca6f5db615de5a1a0
Autor:
Young Min Song, Osman M. Bakr, Tae Hoon Chung, Boon S. Ooi, Bekir Turedi, Young Jin Yoo, Sang Eun Yoon, Ram Chandra Subedi, Iman S. Roqan, Yeong Jae Kim, Somak Mitra, Jung-Wook Min, Tien Khee Ng, Jong H. Kim, Kwangwook Park, Kwang Jae Lee, Jung-Hong Min, Jong-Hyeob Baek, Semi Oh, Namchul Cho, Abdullah Y. Alsalloum, Sunghoon Jung
Publikováno v:
ACS Energy Letters. 5:3295-3303
Introducing suitable electron/hole transport layers and transparent conductive layers (TCLs) into perovskite solar cells (PSCs) is key to enhancing the selective extraction of charge carriers and r...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff5e25055afda603dc761ced65a91c1b
https://doi.org/10.1021/acsenergylett.0c01621
https://doi.org/10.1021/acsenergylett.0c01621
Autor:
Jie Su, Jin-Woo Ju, Jong Hyeob Baek, Dong Soo Lee, Seong-Ran Jeon, Soo Min Lee, Cheul-Ro Lee, Seung-Jae Lee
Publikováno v:
Journal of Nanoscience and Nanotechnology. 19:892-896
The effects of Al metal pre-deposition under different conditions on GaN grown on Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated. Al pre-deposition improves surface morphology and crystal quality of GaN g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45181360d1a2b23e08e43bed403fa5ec
https://doi.org/10.1166/jnn.2019.15969
https://doi.org/10.1166/jnn.2019.15969
Autor:
Jung Sh, Tae-Young Jung, Hwa Sub Oh, Song Ar, Jong Hyeob Baek, Hyunjoo Lee, Young-Jin Kim, Young Dae Cho
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:1867-1870
We investigated high-brightness light emitting diodes appropriate for general lighting applications in terms of their optical behaviors and device performances according to the insertion of the sloped barrier between the well and the barrier and chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6ca55098a34aee6eaa3a6ffff939f86
https://doi.org/10.1166/jnn.2016.12022
https://doi.org/10.1166/jnn.2016.12022
Autor:
N. B. Smirnov, Eugene B. Yakimov, I. V. Shemerov, Jong Hyeob Baek, In Hwan Lee, Alexander Y. Polyakov, Andrei V. Turutin, E. S. Kondratyev, Han Su Cho
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:Q274-Q277
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccada97604657740a5e81cdcf21d2c24
https://doi.org/10.1149/2.0051612jss
https://doi.org/10.1149/2.0051612jss
Publikováno v:
Journal of nanoscience and nanotechnology. 19(3)
High quality GaN epilayers were obtained by using a magnesium nitride (MgxNy) inter-layer. X-ray photoelectron spectroscopy (XPS) reveals Mg 2p core-level spectra from the MgxNy inter-layers. The roughness of the MgxNy layers increased with the growt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c160255ccae102ae65bd7bafe7d7b4c7
https://pubmed.ncbi.nlm.nih.gov/30469211
https://pubmed.ncbi.nlm.nih.gov/30469211
Autor:
Jae-Joon Kim, Young-Chul Leem, Joonhyun Kwon, Beongki Cho, Jang-Won Kang, Jong Hyeob Baek, Sang-Youp Yim, Seong-Ju Park
Publikováno v:
ACS Photonics. 2:1519-1523
We report the increase of the optical output power of InGaN/GaN multiple quantum well (MQW) flip-chip blue light-emitting diodes (LEDs) using cobalt–iron (CoFe) ferromagnetic layers. The CoFe alloy layer is deposited on a p-ohmic reflector of the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e8420742f46219bc33e8372b0ba8aa7
https://doi.org/10.1021/acsphotonics.5b00302
https://doi.org/10.1021/acsphotonics.5b00302
Autor:
Jong Hyeob Baek, Seung-Jae Lee, Dae Woo Jeon, Cheul-Ro Lee, Seong-Ran Jeon, Jae-Chul Song, Junbeom Park, Hyung-Jo Park
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:Q92-Q95
A crack-free, uniform InGaN/GaN light-emitting diode (LED) structure with strain-engineered buffer layer was grown on an 8-inch diameter Si(111) substrate. The full width at half maximum (FWHM) of (002) and (102) ω-scan is 280 and 420 arcsec, respec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5f94d144bec5ffb8aef4c2876ad25dd
https://doi.org/10.1149/2.0151508jss
https://doi.org/10.1149/2.0151508jss
Autor:
Tae-Hoon Chung, Yong-Hoon Cho, Min-Kwan Kim, Chunghyun Park, Jong Hyeob Baek, Joo-hyung Lee, Sunghan Choi
Publikováno v:
SCIENTIFIC REPORTS(7)
Scientific Reports
Scientific Reports
The V-pits and potential fluctuations in InGaN/GaN multiple quantum wells (MQWs) are key factors for understanding the performance of InGaN/GaN-based light-emitting diodes (LEDs). However, photoluminescence (PL) measurements using conventional optica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::117eb7e7818647f1d0b4937cb4925c14
https://doi.org/10.1038/srep42221
https://doi.org/10.1038/srep42221