Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Jong-Hee Yoo"'
Publikováno v:
Metabolites, Vol 14, Iss 1, p 62 (2024)
Black ginseng (BG) is processed ginseng traditionally made in Korea via the steaming and drying of ginseng root through three or more cycles, leading to changes in its appearance due to the Maillard reaction on its surface, resulting in a dark colora
Externí odkaz:
https://doaj.org/article/a92545fd564246e78bec4bb6fabc95f1
Autor:
Seung-Joon Jeon, Jang Won Oh, Kyungjoon Baek, Kee Jeung Lee, Won Kim, Sung Kyu Son, Jong Hee Yoo, Kyung Song, Sang Ho Oh
Publikováno v:
Nanoscale Advances. 2:3841-3848
The reliability of Ge–Sb–Te phase-change memory (PCM) devices has been limited by failure due to void formation and this still remains one of the critical issues affecting their use in storage-class memory applications. To directly observe the vo
Autor:
Inchan Choi, Pue Hee Park, Hongseok Lee, Jong Hee Yoo, Hye Ryun An, Su Young Lee, Pil Man Park, Oh Keun Kwon
Publikováno v:
korean Journal of Horticultural Science&Technology. 37
Autor:
Sang Ho Oh, Kyungjoon Baek, Sung Kyu Son, Kyung Song, Jang Won Oh, Seung-Joon Jeon, Won Kim, Jong Hee Yoo, Kee Jeung Lee
Publikováno v:
Nanoscale Advances; Sep2020, Vol. 2 Issue 9, p3841-3848, 8p
Publikováno v:
ECS Solid State Letters. 2:N21-N25
Amorphous Pr0.7Ca0.3MnO3(APCMO) films grown on a Pt electrode under an oxygen pressure(OP) of 5 mTorr showed a dense microstructure with a smooth surface but bipolar switching behavior was not observed in this film. Porosity and surface roughness inc
Autor:
Hyun Sun Lee, Tae Jung Ha, Hoe Gwon Jung, Yoocharn Jeon, Sung Joo Hong, Kyu Sung Kim, Suock Chung, Wan Gee Kim, Hyeong Soo Kim, Lee Jung Hoon, Gary Gibson, Eung Rim Hwang, Jong Hee Yoo, Kyung Wan Kim, Kee Jeung Lee, Soo Gil Kim, Suk Pyo Song, Hyojin Kim, Seonghyun Kim, Ja Chun Ku, Jong Il Kim, Jong Chul Lee, Sang Hoon Cho, Jae-yeon Lee, Jong Ho Song, Jong Ho Kang, Beom-Yong Kim, Jung Ho Shin, Yong Taek Park
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
In this paper, the authors report that 2x nm cross-point ReRAM with 1S1R structure has been successfully developed. Off-current at 1/2 Vsw of 1S1R is one of key factor for high-density ReRAM. NbO2 was chosen as a selector material and off-current and
Autor:
Hyo June Kim, Hyun Min Lee, Wan Gee Kim, R. Stanley Williams, Lee Jung Hoon, Jianhua Yang, Ha Chang Jung, Beom-Yong Kim, Tae Geun Seong, Hyeong Soo Kim, Yoocharn Jeon, Jong Hee Yoo, Seonghyun Kim, Hyung Dong Lee, Kyoo Ho Jung, Seok-Hee Lee, Kee Jeung Lee, Soo Gil Kim, Suock Chung
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
In this paper, 5Xnm cross point cell array for the low power ReRAM operation was developed with 1S1R cell structure. Through the optimization of both TiOx/TaOx based-1R and NbO 2 based-1S stacks with TiN based-electrode, the world's first and best bi
Autor:
Sook Joo Kim, Jung Nam Kim, Byung Gu Gyun, Jong Hee Yoo, Wan Gee Kim, Sung Ki Park, Jun Young Byun, Moon Sig Joo, Jae Sung Roh, Taeh Wan Kim, Min Gyu Sung, Won Kim
Publikováno v:
2011 International Reliability Physics Symposium.
We measured direct physical evidence that can explain different switching behaviors for HfO 2 based ReRAM structure for the first time. The switching behavior depends on the degree of crystallinity of HfO 2 . We observed crystallized HfO 2 which is g
Autor:
Chi Ho Kim, Jun Young Byun, Won Kim, Sung Joon Yoon, Jong Hee Yoo, Byung Gu Gyun, Jang Won Oh, Te One Youn, Taeh Wan Kim, Wan Gee Kim, Sook Joo Kim, Ho Joung Kim, Jiwon Moon, Min Gyu Sung, Jae Sung Roh, Jung Nam Kim, Sung Ki Park, Moon Sig Joo, Ja Yong Kim
Publikováno v:
2010 Proceedings of the European Solid State Device Research Conference.
In this paper, a systematic approach using HfO 2 , ZrO 2 and TiO 2 with TiN or Ti/TiN electrode has been conducted to research the best material for ReRAM device integration. From the experimental results and proposed model, the proper electrical pro
Autor:
Jung Nam Kim, Jong Hee Yoo, Yong Soo Kim, Wan Gee Kim, Byun Ggu Gyun, Jae Sung Roh, Min Gyu Sung, Moon Sig Joo, Sook Joo Kim, Sung Ki Park, Jun Young Byun, Ja Yong Kim
Publikováno v:
Japanese Journal of Applied Physics. 50:04DD14
The effects of the reactive Ti layer on the resistive switching characteristics of TiN/Ti/TiO2/TiN resistive random access memory (ReRAM) are investigated. Nitridation at the top region of Ti during reactive sputtering of the TiN layer and oxygen get