Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Jong-Bong Ha"'
Publikováno v:
Thin Solid Films. 519:6658-6661
Iodine is an effective catalyst to obtain homogeneous and smooth metal films with good interface properties. We adopted an iodine catalyst during the nickel film deposition by using atomic layer deposition (ALD) with bis(1-dimethylamino-2-methyl-2-bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::797fa1b99eb1f1da111ceb0b9062080d
https://doi.org/10.1016/j.tsf.2011.04.081
https://doi.org/10.1016/j.tsf.2011.04.081
Autor:
Jong-Bong Ha, Ki-Sik Im, Young-Ho Bae, Jung-Hee Lee, Dong-Seok Kim, Sung-Ho Hahm, Yong Soo Lee, Chul-Ho Won, Hee-Sung Kang, Tae-Hyeon Kim, Jae-Hoon Lee, Sorin Cristoloveanu, Ki-Won Kim
Publikováno v:
Microelectronic Engineering. 88:1221-1224
We have grown high quality GaN layers on (111)-oriented silicon substrate using a two-step growth method and fabricated high-performance normally-off n-channel GaN Schottky-barrier MOSFET (SB-MOSFET). Indium-tin-oxide (ITO) was used as Schottky-barri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d523a7d3b3e89afaab57e6ecdfb52db
https://doi.org/10.1016/j.mee.2011.03.119
https://doi.org/10.1016/j.mee.2011.03.119
Autor:
Ki-Won Kim, Hee-Sung Kang, Ki-Sik Im, Jung-Hee Lee, Jong-Bong Ha, Sung-Nam Kim, S.W. Lee, Dong-Seok Kim, Eun-Hwan Kwak
Publikováno v:
Journal of the Korean Physical Society. 58:1500-1504
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3ae02735d98d86b76803026fa4b0612
https://doi.org/10.3938/jkps.58.1500
https://doi.org/10.3938/jkps.58.1500
Publikováno v:
Current Applied Physics. 10:41-46
The effect of poly-Si thickness on silicidation of Ni film was investigated by using X-ray diffraction, auger electron spectroscopy, cross-sectional scanning transmission electron microscopy, resistivity, I–V, and C–V measurements. The poly-Si fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d20e90d6dc3754a0a23e672c3ba0aa4
https://doi.org/10.1016/j.cap.2009.04.011
https://doi.org/10.1016/j.cap.2009.04.011
Autor:
Jong-Bong Ha, Sang-Won Yun, Chi Kyu Choi, Jung-Hee Lee, Jeong Yong Lee, Kwang-Man Lee, Chang Young Kim
Publikováno v:
Journal of the Korean Physical Society. 55:1153-1157
Nickel was deposited by using plasma-assisted atomic layer deposition (PAALD) with a Bis-Ni precursor and H2 reactant gas at 220 ◦C with a deposition rate of 1.55 A/cycle. The as-deposited nickel film exhibited a very low sheet resistance (Rs) of 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51ab296a98d5a72271148840c685ebaf
https://doi.org/10.3938/jkps.55.1153
https://doi.org/10.3938/jkps.55.1153
Autor:
Jong-Bong Ha, Young Kwan Kim, C. Chu, Su Jeong Lee, Su Yul Seo, J. H. Seo, Tae Whan Kim, H. S. Bang, D. C. Choo
Publikováno v:
Thin Solid Films. 517:5314-5317
Electrical and optical properties of blue organic light-emitting devices (OLEDs) with doped or undoped emitting layers (EMLs) consisting of a heterostructure layer or a single layer were investigated. The driving voltage of the OLEDs with an undoped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::826042d977370afeff561fe96d9de92f
https://doi.org/10.1016/j.tsf.2009.03.104
https://doi.org/10.1016/j.tsf.2009.03.104
Autor:
Cheol-Koo Hahn, Ki-Won Kim, Hyun-Chul Choi, Dae-Hyuk Kwon, Clemens Ostermaier, Sun-Young Hyun, S. I. Ahn, Hyun-Ick Cho, Kyoung-Il Na, Jong-Bong Ha, Hwa-Chul Lee, Jung-Hee Lee, Sung-Ho Hahm
Publikováno v:
Japanese Journal of Applied Physics. 47:2824-2827
We present the electrical characteristics of an AlGaN/GaN/p-GaN heterostructure field-effect transistor (HFET) with a Si delta-doped layer. The p-GaN layer greatly improves buffer isolation (between neighboring mesas) in the AlGaN/GaN HFET and leads
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bd59aa462a6698109edb3b74fed06a8
https://doi.org/10.1143/jjap.47.2824
https://doi.org/10.1143/jjap.47.2824
Publikováno v:
Japanese Journal of Applied Physics. 45:1525-1529
In this study, the gate-to-drift overlap length of lateral double diffused metal–oxide–semiconductor field effect transistor (LDMOST) devices is optimized in order to increase their hot-carrier lifetime. LDMOST devices with drift regions are fabr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::019f98faca56befe15f90027a1bb720d
https://doi.org/10.1143/jjap.45.1525
https://doi.org/10.1143/jjap.45.1525
Autor:
Jai-Kwang Shin, Jongseob Kim, U-In Chung, In-jun Hwang, Hyoji Choi, Jae-joon Oh, Jong-Bong Ha, Jong-Bong Park, Jaewon Lee, Jae Cheol Lee, Kyung Yeon Kim, Hyuk Soon Choi
Publikováno v:
IEEE Electron Device Letters. 34:202-204
The impact of gate metals on the threshold voltage (VTH) and the gate current of p-GaN gate high-electron-mobility transistors (HEMTs) is investigated by fabricating p-GaN gate HEMTs with different work function gate metals-Ni and W. p-GaN gate HEMTs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fb6e5c417cf6c0a71f14de53d0039d2
https://doi.org/10.1109/led.2012.2230312
https://doi.org/10.1109/led.2012.2230312
Autor:
Ki-Won Kim, Sung-Dal Jung, Hee-Sung Kang, Jong-Bong Ha, Ki-Sik Im, Dong-Seok Kim, Jae-joon Oh, Jai-Kwang Shin, Jung-Hee Lee
Publikováno v:
IEEE Electron Device Letters. 32:1376-1378
Normally off Al2O3/GaN MOSFETs are fabricated by utilizing a simple tetramethylammonium hydroxide (TMAH) treatment as a postgate-recess process. The TMAH-treated device with a gate length of 2.5 μm exhibited excellent device performances, such as a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::819faa5d28ca6746d3627ee84966486f
https://doi.org/10.1109/led.2011.2163293
https://doi.org/10.1109/led.2011.2163293