Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jong Woo Jin"'
Autor:
Jong Woo Jin, Arokia Nathan, Pedro Barquinha, Luís Pereira, Elvira Fortunato, Rodrigo Martins, Brian Cobb
Publikováno v:
AIP Advances, Vol 6, Iss 8, Pp 085321-085321-8 (2016)
Oxide semiconductor thin-film transistors can show anomalous behavior under bias stress. Two types of anomalies are discussed in this paper. The first is the shift in threshold voltage (VTH) in a direction opposite to the applied bias stress, and hig
Externí odkaz:
https://doaj.org/article/026da87afcd948f38b2e5b8b85529396
Publikováno v:
IEEE Transactions on Electron Devices. 66:4894-4900
We present a drain current model and a consistent parameter extraction method for organic field-effect transistors (OFETs) considering the gate voltage-dependent contact resistance and mobility by power-law. The physical origin of the asymptotic powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b4103a4474f3736bd21752ef530c613
https://doi.org/10.1109/ted.2019.2941564
https://doi.org/10.1109/ted.2019.2941564
Autor:
Argiris Laskarakis, Jong Woo Jin, Chang-Hyun Kim, Maria Seitanidou, Elefterios Lidorikis, Ioannis Vangelidis, Stergios Logothetidis, Gilles Horowitz, Yvan Bonnassieux
Publikováno v:
Solid-State Electronics. 147:39-43
Although metallic nanostructures in solar cells provide versatility in designing useful plasmonic architectures, understanding is still limited on how to exploit their multi-scale contribution as tunable performance. In this article, we suggest a cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d4b1b945d7bc7777de3573aac2f2d93
https://doi.org/10.1016/j.sse.2018.06.005
https://doi.org/10.1016/j.sse.2018.06.005
Publikováno v:
Materials
Volume 12
Issue 1
Materials, MDPI, 2019, ⟨10.3390/ma12010162⟩
Materials, 2019, ⟨10.3390/ma12010162⟩
Materials, Vol 12, Iss 1, p 162 (2019)
Volume 12
Issue 1
Materials, MDPI, 2019, ⟨10.3390/ma12010162⟩
Materials, 2019, ⟨10.3390/ma12010162⟩
Materials, Vol 12, Iss 1, p 162 (2019)
We propose a novel method to pattern the charge recombination layer (CRL) with a low-temperature solution-processable ZnO layer (under 150 °
C) for organic solar cell applications. Due to the optimal drying process and thermal annealing condi
C) for organic solar cell applications. Due to the optimal drying process and thermal annealing condi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8203923cfe2d57aebfaf28942edfb22
Publikováno v:
IET Circuits, Devices & Systems. 6:118
The universal simulation program with integrated circuit emphasis (SPICE) model for hydrogenated amorphous silicon thin-film transistor is largely used in circuit simulation. This model has more than 10 parameters to be extracted through experimental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ff87568dd4fc280ff360671d3be63f3
https://doi.org/10.1049/iet-cds.2011.0124
https://doi.org/10.1049/iet-cds.2011.0124