Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Jong Hyeok Oh"'
Autor:
Jong Hyeok Oh, Yun Seop Yu
Publikováno v:
Micromachines, Vol 14, Iss 10, p 1822 (2023)
In this study, the electrical characteristics and electrical coupling effect for monolithic 3-dimensional nonvolatile memory consisting of a feedback field-effect transistor (M3D-NVM-FBFET) were investigated using technology computer-aided design. Th
Externí odkaz:
https://doaj.org/article/8913b7e8305544dd8898c17563e0fdc9
A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor
Autor:
Jong Hyeok Oh, Yun Seop Yu
Publikováno v:
Micromachines, Vol 13, Iss 10, p 1625 (2022)
A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and
Externí odkaz:
https://doaj.org/article/87b439816af747db9ba7aa6383bb1d59
Autor:
Jong Hyeok Oh, Yun Seop Yu
Publikováno v:
Micromachines, Vol 13, Iss 8, p 1329 (2022)
In this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was investigated. The NFBFET has highly doped N-P junction in the channel region. When drain-source voltage is applied at the NFBFET, the aligning between cond
Externí odkaz:
https://doaj.org/article/2fc9f0c0240c4f8ca15faf7288ad605e
Autor:
Jong Hyeok Oh, Yun Seop Yu
Publikováno v:
Micromachines, Vol 12, Iss 10, p 1174 (2021)
In this study, we propose an improved macro-model of an N-type feedback field-effect transistor (NFBFET) and compare it with a previous macro-model for circuit simulation. The macro-model of the NFBFET is configured into two parts. One is a charge in
Externí odkaz:
https://doaj.org/article/5cfdc20356554685b9f456652a4a28b6
Autor:
Jong Hyeok Oh, Yun Seop Yu
Publikováno v:
Micromachines, Vol 11, Iss 9, p 852 (2020)
The optimal structure and process for the feedback field-effect transistor (FBFET) to operate as a logic device are investigated by using a technology computer-aided design mixed-mode simulator. To minimize the memory window of the FBFET, the channel
Externí odkaz:
https://doaj.org/article/bb026ff4545049f49eb0f1d5a7eb0ae2
Autor:
Yun Seop Yu, Jong Hyeok Oh
Publikováno v:
Journal of nanoscience and nanotechnology. 21(8)
In this study, for two cases of monolithic 3-dimensional integrated circuit (M3DIC) consisting of vertically stacked feedback field-effect transistors (FBFETs), the variation of electrical characteristics of the FBFET was presented in terms of electr
Autor:
Yun Seop Yu, Jong Hyeok Oh
Publikováno v:
Micromachines
Volume 11
Issue 9
Micromachines, Vol 11, Iss 852, p 852 (2020)
Volume 11
Issue 9
Micromachines, Vol 11, Iss 852, p 852 (2020)
The optimal structure and process for the feedback field-effect transistor (FBFET) to operate as a logic device are investigated by using a technology computer-aided design mixed-mode simulator. To minimize the memory window of the FBFET, the channel
Autor:
Phuong Huyen Nguyen, Duc Anh Nguyen, Juchan Lee, Jong Hyeok Oh, Dae Young Park, Chulho Park, Thi Uyen Tran, Ngoc Thanh Duong, Yun Seop Yu, Mun Seok Jeong, Duc Hieu Nguyen
Publikováno v:
Nano Today. 40:101263
A tunnel field-effect transistor (TFET) activated by a quantum band-to-band tunneling mechanism has encouraged the acceleration of nanodevices owing to its capability to beat the thermionic emission limit of a subthreshold swing (SS) (60 mV dec−1)
Publikováno v:
International Conference on Future Information & Communication Engineering (ICFICE); 2022, Vol. 13 Issue 1, p101-103, 3p
Autor:
Suk-Hwan Kang, P.S. Sai Prasad, Jong Wook Bae, Seok-Lyong Song, Jong-Hyeok Oh, Ki-Won Jun, Keh-Sik Min
Publikováno v:
Journal of Industrial and Engineering Chemistry. 15:665-669
The influence of Ga addition to Cu/ZnO (CZ) methanol synthesis catalyst was investigated in the presence (CZA-Ga) and absence (CZ-Ga) of alumina. The reducibility of CZA-Ga was found to be more facile than CZ-Ga. The acidic strength of CZA-Ga was con