Zobrazeno 1 - 10
of 413
pro vyhledávání: '"Jong‐In Shim"'
Autor:
Gi Baek Nam, Jung-El Ryu, Tae Hoon Eom, Seung Ju Kim, Jun Min Suh, Seungmin Lee, Sungkyun Choi, Cheon Woo Moon, Seon Ju Park, Soo Min Lee, Byungsoo Kim, Sung Hyuk Park, Jin Wook Yang, Sangjin Min, Sohyeon Park, Sung Hwan Cho, Hyuk Jin Kim, Sang Eon Jun, Tae Hyung Lee, Yeong Jae Kim, Jae Young Kim, Young Joon Hong, Jong-In Shim, Hyung-Gi Byun, Yongjo Park, Inkyu Park, Sang-Wan Ryu, Ho Won Jang
Publikováno v:
Nano-Micro Letters, Vol 16, Iss 1, Pp 1-17 (2024)
Highlights Blue micro-light-emitting diodes (μLED)-integrated gas sensors were fabricated as monolithic structure by directly loading sensing materials onto the μLED. SnO2 nanoparticles are activated by blue μLED and exhibit outstanding sensitivit
Externí odkaz:
https://doaj.org/article/f4f017893d1e4382838ca608a3dfb65d
Autor:
Sangjin Min, Won-Jin Choi, Dong Hwan Kim, Keuk Kim, Jaehyeok Park, Han-Youl Ryu, Jong-In Shim, Dong-Soo Shin
Publikováno v:
AIP Advances, Vol 14, Iss 10, Pp 105201-105201-4 (2024)
Red micro-light-emitting diodes (μ-LEDs) with AlGaInP/GaInP multiple quantum wells are fabricated with an oxide perimeter region to control the current injection path. When the values of the external quantum efficiency (EQE) of the 30 μm-size μ-LE
Externí odkaz:
https://doaj.org/article/7c1f442fe70c4de3bd3b63373d5269fe
Autor:
Dong-Guang Zheng, Hyeon-Dong Lee, Gyeong Won Lee, Dong-Soo Shin, Jeongwon Kim, Jong-In Shim, Zhiqun Lin, Tae-Woo Lee, Dong Ha Kim
Publikováno v:
Nano Research Energy, Vol 3, Iss 2, p e9120109 (2024)
Organic light-emitting diodes (OLEDs) have demonstrated remarkable advancements in both device lifetime and luminous efficiency. However, insufficient operation lifetime due to device degradation remains a major hurdle, especially for brighter device
Externí odkaz:
https://doaj.org/article/d0df1e0b1b9a4735a79f38b567bc574b
Autor:
Yung Ryel Ryu, Sung Ki Hong, E. Fred Schubert, Dong-Min Jeon, Dong-Soo Shin, Jong-In Shim, Sang-Mook Kim, Jong Hyeob Baek
Publikováno v:
AIP Advances, Vol 14, Iss 4, Pp 045215-045215-6 (2024)
We have developed a light-emitting device, called the ZOGAN light-emitting diode (LED). The ZOGAN LED is formed with the p-layer composed of both ZnO-based oxide and GaN-based nitride semiconductors. The ZOGAN LED shows the characteristics of light-e
Externí odkaz:
https://doaj.org/article/84b28cd810cc4b43af2f4a2f1b2c69e3
Publikováno v:
Electronics Letters, Vol 59, Iss 23, Pp n/a-n/a (2023)
Abstract The ideality factor of a diode gives the information on the current conduction or recombination processes occurring inside the device. The ideality factor obtained from the electrical current–voltage (I–V) characteristics by the conventi
Externí odkaz:
https://doaj.org/article/c0109b33a7aa4987aa8216361588e01d
Publikováno v:
Advances in Condensed Matter Physics, Vol 2022 (2022)
Electronic and optical properties of type-II InGaN/GaNSb/GaN quantum-well (QW) structures are investigated by using the multiband effective mass theory for potential applications in red light-emitting diodes. The heavy-hole effective mass around the
Externí odkaz:
https://doaj.org/article/87f0a14b77a64d5a8fda6493d00356bf
Analysis of Transient Degradation Behaviors of Organic Light-Emitting Diodes under Electrical Stress
Publikováno v:
Applied Sciences, Vol 11, Iss 16, p 7627 (2021)
Despite the wide application of organic light-emitting diodes (OLEDs), the performance of OLED devices is sometimes limited by their reliabilities. In this paper, we report the transient degradation behaviors of fluorescent blue OLEDs, where both the
Externí odkaz:
https://doaj.org/article/457179b0fb09493bac6cd5634cc7d6a5
Publikováno v:
Applied Sciences, Vol 9, Iss 5, p 871 (2019)
We investigate the differences in optoelectronic performances of InGaN/AlGaN multiple-quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different indium compositions. Various macroscopic characterizations have been perfo
Externí odkaz:
https://doaj.org/article/b8c47b09ff7348f38e67a438a041f501
Publikováno v:
Materials, Vol 11, Iss 5, p 743 (2018)
We investigate the cause of the optoelectronic performance variations in InGaN/GaN multiple-quantum-well blue light-emitting diodes, using three different samples from an identical wafer grown on a c-plane sapphire substrate. Various macroscopic meas
Externí odkaz:
https://doaj.org/article/390e55d2e2fe407c8193818d6fff409c
Autor:
Yeon-Soo Kim, Sang-Dae Lee, Seung-Min Baek, Seung-Yun Baek, Hyeon-Ho Jeon, Jun-Ho Lee, Wan-Soo Kim, Jong-Yeal Shim, Yong-Joo Kim
Publikováno v:
Sensors, Vol 22, Iss 7, p 2750 (2022)
The purpose of this study was to analyze the tillage depth effect on the tractor-moldboard plow systems in various soil environments and tillage depths using a field load measurement system. A field load measurement system can measure the engine load
Externí odkaz:
https://doaj.org/article/9e3bc53b71ee48f3b3fd036eba35289a