Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Jone F Chen"'
Publikováno v:
IEEE Transactions on Electron Devices. 69:1823-1829
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69110ac9b47e9186266dfb320160af29
https://doi.org/10.1109/ted.2022.3150645
https://doi.org/10.1109/ted.2022.3150645
Publikováno v:
IEEE Transactions on Electron Devices. 68:5529-5534
A high-permittivity (high- ${k}$ ) inserted-oxide FinFET (iFinFET) structure with low-permittivity inner spacers is proposed for CMOS transistor scaling to the 3-nm technology node and beyond. The process to fabricate an iFinFET is similar to the pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d9c8e44be015e69de94e145d9c87310
https://doi.org/10.1109/ted.2021.3114668
https://doi.org/10.1109/ted.2021.3114668
Publikováno v:
IEEE Transactions on Electron Devices. 66:1754-1759
A scheme for precisely adjusting the drive strength of an inserted-oxide FinFET (iFinFET) comprising two nanowire (NW) channel regions that are separated by a thin oxide layer, to enhance the manufacturing yield of a minimally sized six-transistor st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aea11a5e665f0e7156d000d7731d7ee
https://doi.org/10.1109/ted.2019.2900921
https://doi.org/10.1109/ted.2019.2900921
Autor:
Meng-Hsueh Chiang, Tiehui Liu, Daniel Connelly, Yi-Ting Wu, Jone F. Chen, Fei Ding, Peng Zheng
Publikováno v:
IEEE Transactions on Electron Devices. 64:4193-4199
A hybrid fin/planar lateral double-diffused MOSFET (LDMOS) design (hybrid FET) is proposed for the high-voltage input–output devices in a FinFET-based system-on-chip (SoC) technology. 3-D technology computer-aided design simulations show that a pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eb5e0b56e9dc5112a37e92d9972d86d
https://doi.org/10.1109/ted.2017.2736442
https://doi.org/10.1109/ted.2017.2736442
Autor:
Wei-Chih Lai, Sheng Po Chang, Shoou-Jinn Chang, Wei Lun Huang, Guan Yuan Liou, Tzu Hsin Chen, Jone F. Chen
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:055015
We successfully fabricated MoS2 photodetectors with different layers by sulfurization. It is found that the dark current increases with the number of layers. The three-layer MoS2 photodetector has the largest response, which is 3.23 × 10−6 A/W at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50e79d674730659b85febc5766a2c98a
https://doi.org/10.1149/2162-8777/ac02a2
https://doi.org/10.1149/2162-8777/ac02a2
Autor:
Chia Wei Hsu, Jone F. Chen, Yi-Wen Chen, San Lein Wu, Shih Chang Tsai, Po Chin Huang, Tsung Hsien Kao, Yean-Kuen Fang, Osbert Cheng, Chien-Ming Lai, Kai-Shiang Tsai
Publikováno v:
IEEE Transactions on Electron Devices. 62:988-993
The random telegraph noise (RTN) characteristics of high- $k$ (HK)/metal gate (MG) pMOSFETs with uniaxial compressive strain have been investigated. The configuration-coordinate diagram and band diagram are both established by extracting trap paramet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fcdab8eea8b252553c44fde2132da40
https://doi.org/10.1109/ted.2015.2391298
https://doi.org/10.1109/ted.2015.2391298
Autor:
Y.-S. Feng, Jone F. Chen
Publikováno v:
Electronics Letters. 52:1488-1490
The mechanism of hot-carrier-induced drain breakdown voltage walkout in an n-type lateral diffused MOS transistor is investigated. On the basis of the data of charge pumping measurement, hot-carrier-induced interface states created at the accumulatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8708a5eae79d008afac20251995ff33b
https://doi.org/10.1049/el.2016.2033
https://doi.org/10.1049/el.2016.2033
Publikováno v:
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
A scheme to precisely adjust the drive strength of an inserted-oxide FinFET (iFinFET), to enhance the manufacturing yield of a minimally sized six-transistor (6-T) SRAM cell, is proposed. Specifically, the top nanowire (NW) channel in an iFinFET can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b140da924595a5e5d7934e4c1c4f1f9
https://doi.org/10.1109/s3s.2017.8309217
https://doi.org/10.1109/s3s.2017.8309217
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1ae43e1915da07c5ef0ba9f591458b2
https://doi.org/10.7567/ssdm.2017.ps-3-10
https://doi.org/10.7567/ssdm.2017.ps-3-10
Autor:
Ya-Jui Lee, Chin-Rung Yan, Yu-Jie Liao, Yin-Chia Lin, Jone F. Chen, Huei-Haurng Chen, Chung-Yi Lin, Chih-Yuan Chen
Publikováno v:
IEEE Transactions on Electron Devices. 60:992-997
A method to extract the interface states (Nit) located in the center area (center Nit) and the Nit located in the corner region (corner Nit) of NAND Flash devices is presented in this paper. This Nit extraction method is based on a careful combinatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3ae82ed035d577a504faae2e12baed8
https://doi.org/10.1109/ted.2013.2240458
https://doi.org/10.1109/ted.2013.2240458