Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Jonathon Cottom"'
Publikováno v:
Advanced Physics Research, Vol 3, Iss 2, Pp n/a-n/a (2024)
Abstract Amorphous silicon nitride (a‐Si3N4) is an essential material for a wide variety of electronic devices, ranging from its use in dielectric layers to its paramount importance for memory applications. In particular, the latter has triggered t
Externí odkaz:
https://doaj.org/article/7380cbe3e56a4e4f935f206a45a07ea0
Publikováno v:
Carbon. 177:226-243
Alkali metal ion batteries are instrumental in the widespread implementation of electric vehicles, portable electronics, and grid energy storage. From experimental characterisation of hard carbons, these carbon anodes were shown to contain a variety
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::215489b71b08bb3df059e1fad9b6b1bb
https://doi.org/10.1016/j.carbon.2021.02.065
https://doi.org/10.1016/j.carbon.2021.02.065
Autor:
Emilia Olsson, Jonathon Cottom, Hande Alptekin, Heather Au, Maria Crespo‐Ribadeneyra, Maria‐Magdalena Titirici, Qiong Cai
Publikováno v:
Small. Wiley-VCH
Hard carbon (HC) anodes together with ethylene carbonate (EC)-based electrolytes have shown significant promise for high-performing sodium-ion batteries. However, questions remain in relation to the initial contact between the carbon surface and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4122c1b732c92f368fdb77865ed04ec6
https://pubmed.ncbi.nlm.nih.gov/36026547
https://pubmed.ncbi.nlm.nih.gov/36026547
Publikováno v:
Physical Chemistry Chemical Physics. 22:692-699
One of the main challenges facing solid oxide fuel cell (SOFC) technology is the need to develop materials capable of functioning at intermediate temperatures (500–800 °C), thereby reducing the costs associated with SOFCs. Here, Sm0.75A0.25MnxCo1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93cf3ebbbe2df78620f007b80c918ad6
https://doi.org/10.1039/c9cp04892h
https://doi.org/10.1039/c9cp04892h
Autor:
Michel Bosman, Alexander L. Shluger, Maxim N. Popov, Emilia Olsson, Jürgen Spitaler, Kamal Patel, Jonathon Cottom, M Munde, Anton S. Bochkarev
Publikováno v:
ACS Applied Materials & Interfaces. 11:36232-36243
Silica-based resistive random access memory devices have become an active research area due to complementary metal–oxide–semiconductor compatibility and recent dramatic increases in their performan...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16d4aad1b8e30e85bbb5a4dd5a5365d9
https://doi.org/10.1021/acsami.9b10705
https://doi.org/10.1021/acsami.9b10705
Autor:
Jonathon Cottom, Manesh V. Mistry, Alexander L. Shluger, Thomas Aichinger, Gernot Gruber, Gregor Pobegen
Publikováno v:
Materials Science Forum. 963:199-203
Electron energy loss spectroscopy (EELS) and ab initio simulations are combined in this study to produce an atomistic interpretation of the interface morphology in lateral 4H-SiC / SiO2 MOSFETs with deposited gate oxides. This allows the question of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ee513a714c07fa9d8d3310a247bb2bc
https://doi.org/10.4028/www.scientific.net/msf.963.199
https://doi.org/10.4028/www.scientific.net/msf.963.199
Autor:
Gregor Pobegen, Al-Moatasem El-Sayed, Manesh V. Mistry, Alexander L. Shluger, Thomas Aichinger, K. Patel, Jonathon Cottom
Publikováno v:
Materials Science Forum. 963:194-198
The NO anneal has been shown to effectively remove 99% of defects in SiC based devices. However, the details of interactions of NO molecules with amorphous (a)-SiO2 and SiC/SiO2 interface are still poorly understood. We use DFT simulations to investi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f6765e8e96e5bc738befbbe065c7188
https://doi.org/10.4028/www.scientific.net/msf.963.194
https://doi.org/10.4028/www.scientific.net/msf.963.194
Publikováno v:
Microelectronics Reliability. 98:144-152
Density Functional Theory (DFT) calculations were used to model the incorporation and diffusion of Ag in Ag/SiO2/Me (Me = W or Pt) resistive random-access memory (RRAM) devices. We consider an O vacancy (VO) mediated model of the initial stages of Ag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aec0da183972d9dcba9c743c770f9a11
https://doi.org/10.1016/j.microrel.2019.05.005
https://doi.org/10.1016/j.microrel.2019.05.005
Autor:
Hande Alptekin, Heather Au, Emilia Olsson, Jonathon Cottom, Anders CS Jensen, Thomas F. Headen, Qiong Cai, Alan J. Drew, Maria Crespo Ribadeneyra, Maria‐Magdalena Titirici
Publikováno v:
Advanced Materials Interfaces. 9:2270040
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67c2acfbdbd284da1243c954736c43e9
https://doi.org/10.1002/admi.202270040
https://doi.org/10.1002/admi.202270040
Understanding the effect of electric fields on defect creation and diffusion in metal oxides is of fundamental importance for developing accurate models of oxide degradation in electronic devices and dielectric breakdown. We use the Berry phase opera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f8c5ddc7ff00f72a778e03201ffcafb
https://hdl.handle.net/11380/1249293
https://hdl.handle.net/11380/1249293
