Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Jonathan Wyrick"'
Autor:
Xiqiao Wang, Ehsan Khatami, Fan Fei, Jonathan Wyrick, Pradeep Namboodiri, Ranjit Kashid, Albert F. Rigosi, Garnett Bryant, Richard Silver
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-12 (2022)
Atomically precise artificial lattices of dopant-based quantum dots offer a tunable platform for simulations of interacting fermionic models. By leveraging advances in fabrication and atomic-state control, Wang et al. report quantum simulations of th
Externí odkaz:
https://doaj.org/article/b1c2a41d4c9c4435bc1e4b3deb2038b6
Autor:
Jonathan Wyrick, Xiqiao Wang, Pradeep Namboodiri, Ranjit Vilas Kashid, Fan Fei, Joseph Fox, Richard Silver
The doping of Si using the scanning probe hydrogen depassivation lithography technique has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy. Several groups have now used this capability to build devices th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70dc20abef06126db6003d2b5b1b6ebb
Autor:
Michael Stewart, Xiqiao Wang, Richard M. Silver, Scott W. Schmucker, Ranjit V. Kashid, Joseph A. Hagmann, Jonathan Wyrick, Pradeep Namboodiri, Curt A. Richter
Publikováno v:
Physical Review B. 101
Autor:
Michael Stewart, Ranjit V. Kashid, Richard M. Silver, Scott W. Schmucker, Jonathan Wyrick, Xiqiao Wang, Pradeep Namboodiri, Andrew Murphy
Publikováno v:
Communications Physics, Vol 3, Iss 1, Pp 1-9 (2020)
Atomically precise donor-based quantum devices are a promising candidate for solid-state quantum computing and analog quantum simulations. However, critical challenges in atomically precise fabrication have meant systematic, atomic scale control of t
Autor:
Ranjit V. Kashid, Richard M. Silver, Scott W. Schmucker, Pradeep Namboodiri, Jonathan Wyrick, Xiqiao Wang
Publikováno v:
Nano Letters. 18:7502-7508
Hydrogen atoms on a silicon surface, H–Si (100), behave as a resist that can be patterned with perfect atomic precision using a scanning tunneling microscope. When a hydrogen atom is removed in this manner, the underlying silicon presents a chemica
Autor:
Joseph A. Hagmann, Frederick Misenkosen, Michael Stewart, Richard M. Silver, Jonathan Wyrick, Kai Li, Alline F. Myers, Xiqiao Wang, Pradeep Namboodiri, Roy Murray, Curt A. Richter
Publikováno v:
Nanoscale. 10:4488-4499
Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable the patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer syste
Autor:
Jonathan Wyrick, Richard M. Silver, Pradeep Namboodiri, Joshua Schumacher, Michael Stewart, Alline F. Myers, Ranjit V. Kashid, Binhui Hu, Scott W. Schmucker, Xiqiao Wang
Publikováno v:
Physical review applied. 11
Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional δ-doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the
Autor:
Ingmar Swart, Shashank Misra, Norbert M. Linke, Wiley P. Kirk, Kaden R. A. Hazzard, Cheng Chin, Bhuvanesh Sundar, Jonathan Wyrick, Garnett W. Bryant, Neil M. Zimmerman
Publikováno v:
2D Quantum Metamaterials.
Autor:
Jonathan Wyrick, Shashank Misra
Publikováno v:
2D Quantum Metamaterials.