Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Jonathan S. Barnard"'
Autor:
Silvana S. S. Cardoso, Amy McCormick, Jonathan S. Barnard, Arna Sigurðardóttir, Danielle Bullamore, Julyan H. E. Cartwright
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
Philos Trans A Math Phys Eng Sci
instname
Philos Trans A Math Phys Eng Sci
Weak bubble plumes carry liquid from the environment upwards and release it at multiple intermediate levels in the form of radial intrusive currents. In this study, laboratory experiments are performed to explore the spreading of turbulent axisymmetr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3911f1c019bce8eb45aaac3e6c3749b
http://hdl.handle.net/10261/225334
http://hdl.handle.net/10261/225334
Segregation assisted microtwinning during creep of a polycrystalline L12-hardened Co-base superalloy
Autor:
O.M.D.M. Messé, Catherine M.F. Rae, Steffen Neumeier, Jonathan S. Barnard, Mathias Göken, Lisa P. Freund
Publikováno v:
Acta Materialia. 123:295-304
A polycrystalline L12-hardened Co-base superalloy was creep deformed at 750 °C. The investigation of the deformed microstructure in the transmission electron microscope revealed microtwinning to be the prevailing deformation mechanism. The detected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a969e91c5da41646ac991c94833394e
https://doi.org/10.1016/j.actamat.2016.10.048
https://doi.org/10.1016/j.actamat.2016.10.048
Publikováno v:
Acta Materialia. 120:14-23
This work discusses the effects of alloying on the coarsening behaviour of the L12 ordered γ′ phase and the structure of the γ/γ′ interfaces in three Co-Al-W base superalloys aged at ∼90 °C below the respective solvus temperatures: Co-7Al-7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71550a4c0680ba645af0b85c83eb8660
https://doi.org/10.1016/j.actamat.2016.08.023
https://doi.org/10.1016/j.actamat.2016.08.023
Autor:
Howard J. Stone, R. Muñoz-Moreno, S. Baker, Jonathan S. Barnard, T. Illston, V.D. Divya, Omdm Messé
Publikováno v:
Materials Characterization. 114:62-74
The selective laser melting of high temperature alloys is of great interest to the aerospace industry as it offers the prospect of producing more complex geometries than can be achieved with other manufacturing methods. In this study, the microstruct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::629b4a98b38add4ddcfd73d9276a7673
https://doi.org/10.1016/j.matchar.2016.02.004
https://doi.org/10.1016/j.matchar.2016.02.004
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Microscopy of Semiconducting Materials 2001
Microscopy of Semiconducting Materials 2001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7023fe47511852090feacdd68932b73e
https://doi.org/10.1201/9781351074629-55
https://doi.org/10.1201/9781351074629-55
Autor:
Z H Zaidi, Ivor Guiney, Peter A. Houston, Colin J. Humphreys, Rachel A. Oliver, Giorgio Divitini, Paul A. J. Bagot, Tomas L. Martin, Fengzai Tang, David J. Wallis, Michael P. Moody, K. B. Lee, Martin Frentrup, Jonathan S. Barnard
Publikováno v:
Tang, F, Lee, K B, Guiney, I, Frentrup, M, Barnard, J S, Divitini, G, Zaidi, Z H, Martin, T L, Bagot, P A, Moody, M P, Humphreys, C J, Houston, P A, Oliver, R A & Wallis, D J 2018, ' Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors ', Journal of Applied Physics, vol. 123, no. 2, 024902 . https://doi.org/10.1063/1.5006255
We investigate the impact of a fluorine plasma treatment used to obtain enhancement-mode operation on the structure and chemistry at the nanometer and atomic scales of an InAlN/GaN field effect transistor. The fluorine plasma treatment is successful
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::916f3e5d57eb1bf48feb91df561b9f0d
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Microscopy of Semiconducting Materials 2003
Microscopy of Semiconducting Materials 2003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e4b4d04fb6c620a35f33b86f6190dad
https://doi.org/10.1201/9781351074636-65
https://doi.org/10.1201/9781351074636-65
Autor:
T. J. O'Hanlon, Helen Springbett, Christopher X. Ren, S.-L. Sahonta, Rachel A. Oliver, Jonathan S. Barnard, Tongtong Zhu, James T. Griffiths
Publikováno v:
physica status solidi (b). 253:840-844
Droplets grown by modified droplet epitaxy on non-polar (11-20) surfaces of InGaN epilayers on GaN have been seen to be associated with underlying ring-like structures. This work discusses droplet etching as a possible mechanism for ring formation, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b27d600b1ea921d9f2a7340f4a78aa9
https://doi.org/10.1002/pssb.201552633
https://doi.org/10.1002/pssb.201552633
Methods are presented for aligning the pivot point of a precessing electron probe in the scanning transmission electron microscope (STEM) and for assessing the spatial resolution in scanning precession electron diffraction (SPED) experiments. The ali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ac7de70bea13bfa211fcc999b297812
Autor:
Jeffrey M. Wheeler, Peter Gille, C. Walter, Jonathan S. Barnard, J. Michler, Sandra Korte-Kerzel, Rejin Raghavan, William Clegg
Publikováno v:
Acta Materialia. 61(19):7189-7196
The single crystal deformation behaviour of orthorhombic Al13Co4 hasbeen studied below the brittle-ductile transition temperature observedin bulk material from room temperature to 600 degrees C, usingindentation, microcompression and transmission ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::340d7e252949382ce2cdb9a5b5a39237