Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Jonathan R. Skuza"'
Publikováno v:
Crystals, Vol 14, Iss 9, p 753 (2024)
This paper demonstrates how the treatment of III-V semiconductor surface affects the number of defects and ensures the conformal growth of the high-k dielectric thin film. We present the electrical properties of an HfO2/InGaAs-based MOS capacitor, in
Externí odkaz:
https://doaj.org/article/47fa63c0deb94a39a3a84471b30f6e9a
Autor:
Sangram K, Pradhan, Bo, Xiao, Jonathan R, Skuza, Kevin, Santiago, Rajeh, Mundle, Aswini K, Pradhan
Publikováno v:
Optics express. 22(10)
We fabricated one-dimensional periodic multilayered metamaterial structures consisting of Ag and SiO₂alternating layers. Optical responses, such as transmission and absorption, are consistent well within finite difference time domain (FDTD) simulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3f5c6e318dc8ec0738ec9bc86f35c3a8
https://pubmed.ncbi.nlm.nih.gov/24921366
https://pubmed.ncbi.nlm.nih.gov/24921366