Zobrazeno 1 - 10
of 161
pro vyhledávání: '"Jonathan P. Goss"'
Publikováno v:
THE 5TH INTERNATIONAL CONFERENCE ON MATERIALS ENGINEERING AND NANOTECHNOLOGY (ICMEN 2021).
Autor:
Jonathan P. Goss, Simon E. Greenough, Michael Staniforth, Maurizio Monti, Mark E. Newton, Daniel J. L. Coxon, Vasilios G. Stavros, Ben Breeze, James Lloyd-Hughes
Publikováno v:
The Journal of Physical Chemistry Letters. 11:6677-6683
Atomic-scale defects can control the exploitable optoelectronic performance of crystalline materials, and several point defects in diamond are emerging functional components for a range of quantum technologies. Nitrogen and hydrogen are common impuri
Publikováno v:
Ashfold, M N R, Goss, J P, Green, B L, May, P W, Newton, M E & Peaker, C V 2020, ' Nitrogen in Diamond ', Chemical Reviews, vol. 120, 12, pp. 5745-5794 . https://doi.org/10.1021/acs.chemrev.9b00518.
Nitrogen is ubiquitous in both natural and laboratory-grown diamond, but the number and nature of the nitrogen-containing defects can have a profound effect on the diamond material and its properties. An ever-growing fraction of the supply of diamond
Publikováno v:
Diamond and Related Materials. 94:137-145
Control over the chemical termination of diamond surfaces has shown great promise in the realization of field-emission applications, the selection of charge states of near-surface color-centers such as NV, and the realization of surface-conductive ch
Doubly charged silicon vacancy center, Si-N complexes, and photochromism in N and Si codoped diamond
Autor:
Patrick R. Briddon, P.L. Diggle, T. Ardon, X. X. Wu, C. P. Michaels, Matthew W. Dale, R. Gupta, Mark Rayson, Claire J. Meara, Jonathan P. Goss, I. Friel, Ben Green, Ben Breeze, Mark E. Newton, B. L. Cann, U.F.S. D'Haenens-Johansson
Publikováno v:
Physical Review B. 101
Diamond samples containing silicon and nitrogen are shown to be heavily photochromic, with the dominant visible changes due to simultaneous change in total ${\mathrm{SiV}}^{0/\ensuremath{-}}$ concentration. The photochromism treatment is not capable
Publikováno v:
Results in Physics, Vol 16, Iss, Pp 102860-(2020)
We present a first principles density functional theory study of microscopic properties of Hydrogen defect centres in diamond. Several configurations, involving interstitial hydrogen impurities, have been considered either forming with other defects,
Publikováno v:
Journal of Crystal Growth. 468:728-731
Oxide perovskites such as BaZrO 3 possess many significant properties which render them useful in many technological and scientific applications such as sensors, optoelectronics, laser frequency doubling and high capacity memory cells. Several method
Publikováno v:
Physical Review B. 100
A quantum-chemical study of the positive charge-state of the nitrogen-vacancy center in diamond is presented. Charge control of this promising qubit candidate is a focus of diamond quantum technology research, as currently charge stability relating t
Autor:
Raied Al-Hamadany, Patrick R. Briddon, Mark Rayson, Mariam Ahmed, Jonathan P. Goss, Meaad Al-Hadidi
Publikováno v:
Ferroelectrics. 497:9-14
Strontium titanate has attracted both experimental and theoretical attention due to its high permittivity. Different growth methods yield various qualities of material, and thin-films grown using organic precursors lead to a high probability of carbo
Autor:
Meaad Al-Hadidi, Mark Rayson, Oras A. Al-Ani, Jonathan P. Goss, N. E. B. Cowern, Patrick R. Briddon
Publikováno v:
Journal of Crystal Growth. 468:101-103
Transition metals, and in particular iron, are deleterious when contaminating electronic grade silicon. The gettering of these impurities to less important regions of devices is therefore a key mechanism in the optimisation of materials for applicati