Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Jonathan Marini"'
Overview and Progress Toward High-Efficiency, Air Stable, Cs-Free III-Nitride Photocathode Detectors
Autor:
Emma Rocco, Jonathan Marini, Kasey Hogan, Vincent Meyers, Benjamin McEwen, L. Douglas Bell, F. Shahedipour-Sandvik
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 2, Pp 1-12 (2022)
We review the recent progress to achieve air stable III-nitride photocathodes for applications as photon detectors. High conductivity p-type films are critically important to realize high quantum efficiency (QE) photocathodes with effective negative
Externí odkaz:
https://doaj.org/article/5a7bc1fce6c440d5abeefd7ae3b7852f
Autor:
Kasey Hogan, Jonathan Marini, Fatemeh Shahedipour-Sandvik, Nathan Lazarus, Emma Rocco, Randy P. Tompkins, Isra Mahaboob
Publikováno v:
Journal of Electronic Materials. 47:6625-6634
We report on the selective area epitaxy (SAE) of AlGaN/GaN microstructures in stretchable geometric patterns. We have investigated dependence of Al incorporation, lateral/sidewall growth profile and electrical properties of SAE heterostructures on Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7d3210db272b844682d2af671590373
https://doi.org/10.1007/s11664-018-6576-z
https://doi.org/10.1007/s11664-018-6576-z
Autor:
Kasey Hogan, L. D. Bell, Steve Novak, Fatemeh Shahedipour-Sandvik, Isra Mahaboob, Jonathan Marini
Publikováno v:
Journal of Electronic Materials. 46:5820-5826
We report on the effect of growth polarity and pulsed or $$\delta $$ -doped growth mode on impurity incorporation in metalorganic chemical vapor deposition-grown GaN. In Ga-polar orientation, up to 12× enhancement in Mg concentration for given Mg fl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d908ff09b2a84e983880769070a878b
https://doi.org/10.1007/s11664-017-5602-x
https://doi.org/10.1007/s11664-017-5602-x
Autor:
Jeff Leathersich, Jonathan Marini, Isra Mahaboob, F. Shadi Shahedipour-Sandvik, Puneet Suvarna, Neil Newman, John Bulmer
Publikováno v:
IEEE Photonics Technology Letters. 28:39-42
We report on the polarization engineering of GaN/AlGaN heterostructures for the improvement of III-Nitride photodetectors through physics-based device simulations. Various heterojunction p-i-n and p-i-n-i-n designs are proposed and analyzed in this c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::097a28237d32af6518e9812b8db24dd8
https://doi.org/10.1109/lpt.2015.2479115
https://doi.org/10.1109/lpt.2015.2479115
Autor:
L. Douglas Bell, F. Shadi Shahedipour-Sandvik, Jeffrey M. Leathersich, John Bulmer, Puneet Suvarna, Jonathan Marini, Shouleh Nikzad, John Hennessy, Isra Mahaboob
Publikováno v:
IEEE Photonics Technology Letters. 27:498-501
We report on the development of ion implantation-based contact-edge termination technique to improve the reliability and performance of p-i-n and p-i-n-i-n GaN ultraviolet avalanche photodiode structures. The GaN photodiode structures were grown on s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f0d3c1756a76f0d34a35f14609a1420
https://doi.org/10.1109/lpt.2014.2382611
https://doi.org/10.1109/lpt.2014.2382611
Autor:
Fatemeh Shahedipour-Sandvik, Jeff Leathersich, Andrew Clark, Puneet Suvarna, Erdem Arkun, Jonathan Marini, Rytis Dargis
Publikováno v:
Journal of Crystal Growth. 399:49-53
Epitaxy of GaN films on crystalline rare earth oxide (cREO) buffer layers on Si(111) substrates was performed to explore the possibility of cREOs as a buffer layer for GaN-on-Si epitaxy. MOCVD GaN films were first deposited on Er2O3 and Gd2O3 layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db5e0ec2bf94eab0462b1d6782d88539
https://doi.org/10.1016/j.jcrysgro.2014.04.015
https://doi.org/10.1016/j.jcrysgro.2014.04.015
Autor:
L. Douglas Bell, Puneet Suvarna, Jonathan Marini, Jeffrey M. Leathersich, Fatemeh Shahedipour-Sandvik, Shouleh Nikzad, John Hennessy
Publikováno v:
MRS Proceedings. 1635:23-28
We have investigated surface modification methods for avalanche photodiodes using dielectrics deposited by atomic layer deposition (ALD). Arrays of mesa GaN APDs were fabricated, and ALD Al2O3 was used for sidewall passivation prior to completing the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::143c5e0bb3a5b139edeb754ffa133e69
https://doi.org/10.1557/opl.2014.204
https://doi.org/10.1557/opl.2014.204
Publikováno v:
Journal of Applied Physics. 123:124502
We report on the development and verification of a Monte Carlo simulator for III-nitride photocathode structures. Due to the complexity of the process, attributing experimental photoemission results to physical origins can be difficult. We discuss th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d8589a0ce3d3aa00910d170f3e51726
https://doi.org/10.1063/1.5022200
https://doi.org/10.1063/1.5022200
Publikováno v:
ECS Meeting Abstracts. :1250-1250
High quality AlxGa1-xN material is sought after for a large range of applications including emitters, detectors, and power electronic devices. To realize deep ultraviolet (UV) LEDs and Lasers, highly conductive films with high crystalline quality and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb6ca6819b767d8c1eb5eafc5aba8505
https://doi.org/10.1149/ma2017-02/29/1250
https://doi.org/10.1149/ma2017-02/29/1250