Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jonathan L. Partridge"'
Autor:
Jonathan L. Partridge, Jessica A. Murdzek, Virginia L. Johnson, Andrew S. Cavanagh, Andreas Fischer, Thorsten Lill, Sandeep Sharma, Steven M. George
Publikováno v:
Chemistry of Materials. 35:2058-2068
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd1f3fdcac2187c1fba3a8c172248cc1
https://doi.org/10.1021/acs.chemmater.2c03616
https://doi.org/10.1021/acs.chemmater.2c03616
Publikováno v:
Chemistry of Materials. 34:6440-6449
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58bbfd5fb79e7fead9b2e865eb1c0ef5
https://doi.org/10.1021/acs.chemmater.2c01120
https://doi.org/10.1021/acs.chemmater.2c01120
Autor:
Simon D. Elliott, Jonathan L. Partridge, Austin M. Cano, Suresh Kondati Natarajan, Steven M. George
Publikováno v:
The Journal of Physical Chemistry C. 125:25589-25599
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4abb9763b3dcdda94ce811dac94f099
https://doi.org/10.1021/acs.jpcc.1c08110
https://doi.org/10.1021/acs.jpcc.1c08110
Autor:
Austin M. Cano, Suresh Kondati Natarajan, Jonathan L. Partridge, Simon D. Elliott, Steven M. George
Funding Information: The FTIR studies were funded by Intel through a member specific research grant through the Semiconductor Research Corporation (SRC). Support for the new QMS reactor and the QMS investigations was provided by Lam Research. S.K.N.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03145bdf4a40e03db33adf0630f4230c
https://aaltodoc.aalto.fi/handle/123456789/113898
https://aaltodoc.aalto.fi/handle/123456789/113898
Autor:
Jonas C. Gertsch, Jonathan L. Partridge, Austin M. Cano, Joel W. Clancey, Victor M. Bright, Steven M. George
Publikováno v:
Journal of Vacuum Science & Technology A. 41:012603
The thermal atomic layer etching (ALE) of VO2 was demonstrated using sequential exposures of BCl3 and SF4. The VO2 etch rate measured by quartz crystal microbalance investigations at 250 °C was 2.3 Å/cycle. The mass losses during individual BCl3 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19987ba7c89e87500f23738a7583c9a3
https://doi.org/10.1116/6.0002149
https://doi.org/10.1116/6.0002149
Autor:
Andriy Zakutayev, Glenn Teeter, Aaron M. Holder, Patricia C. Dippo, William Tumas, Michael F. Toney, Bor-Rong Chen, Gerbrand Ceder, Laura T. Schelhas, Stephan Lany, Jonathan L. Partridge, Allison Mis, Wenhao Sun, Adele C. Tamboli, John D. Perkins, Elisabetta Arca
Publikováno v:
Materials Horizons. 6:1669-1674
Ternary nitride semiconductors with wurtzite-derived crystal structures are an emerging class of materials for optoelectronic applications compatible with GaN and related III–V compounds. In particular, II–IV–V2 materials such as ZnSnN2 and ZnG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e3842434581b0f0e913c2b77e4a9c3c
https://doi.org/10.1039/c9mh00369j
https://doi.org/10.1039/c9mh00369j