Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jonathan Kerner"'
Publikováno v:
Thin Solid Films. 373:222-226
Synchrotron radiation based total reflection X-ray fluorescence (TXRF) has been shown to meet the critical needs of the semiconductor industry for the analysis of transition metal impurities on silicon wafer surfaces. The current best detection limit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07f56215103386cddb4720a9e11878d6
https://doi.org/10.1016/s0040-6090(00)01139-1
https://doi.org/10.1016/s0040-6090(00)01139-1
Publikováno v:
SPIE Proceedings.
Available photodiodes are reviewed with attention given to the performance parameters, temporal stability, and appropriateness for narrow bandpass applications and certain photon energies. The configuration of XUV photodiodes for use in the EUV and s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dd77fb93f546c6b68def0ff912ff152
https://doi.org/10.1117/12.23265
https://doi.org/10.1117/12.23265
Autor:
Dean W. Schulze, Jonathan Kerner, Charles M. Falco, M. Burkland, J. R. Roberts, Edward B. Saloman, Zoran Milanovic, A. R. Lampis, Patrick A. Kearney, Jon M. Slaughter
Publikováno v:
SPIE Proceedings.
Multilayer coatings have been designed for peak reflectivity at 182.2A and 45° angle of incidence. An optimizing computer code was used to find the best layer thicknesses and total number of layers in the structure. Silicon was chosen as the spacer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb42c2bd3b6bffde696cbc5328816579
https://doi.org/10.1117/12.962646
https://doi.org/10.1117/12.962646
Publikováno v:
Applied Optics. 28:3940
Recent improvements in silicon photodiode fabrication technology have resulted in the production of photodiodes which are stable after prolonged exposure to short wavelength radiation and which have efficiencies in the far ultraviolet close to those
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05fb24b98ce2b98b5e6efa8639c19fd7
https://doi.org/10.1364/ao.28.003940
https://doi.org/10.1364/ao.28.003940
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